Rohm & Haas Electronic Materials LLC

Shipley Company LLC

Chi Q Truong

Dana A Gronbeck

Michael K Gallagher

Anthony Zampini

Amy M Kwok

Ashish A Pandya

Suzanne M Coley

The invention includes new organic-containing compositions that can function as an antireflective layer for an overcoated photoresist. Compositions of the invention also can serve effectively as a hard mask layer by exhibiting a sufficient plasma etch selectivity from an undercoated layer. Preferred compositions of the invention have a high Si content and comprise a blend of distinct resins.

Antireflective hard mask compositions

The present invention provides polymers which are substantially or completely free of inorganic contaminants and the use of such polymers as a resin component for photoresist compositions, particularly chemically-amplified positive-acting resists. Polymers of the invention also are suitable for use as a resin component for antireflective coating compositions (ARCs). More particularly, the invention provides methods for reducing such contaminants in polymerization initiators, particularly free radical initiators.

Reduction of inorganic contaminants in polymers and photoresist compositions comprising same

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Westborough, MA, United States of America

Chi Q Truong