Applied Materials, Inc.

Chi Lu

Mehul B Naik

Chi-I Lang

He Ren

Hao Jiang

Abhijit Basu Mallick

Pramit Manna

Eswaranand Venkatasubramanian

Ho-yung David Hwang

Takehito Koshizawa

Nancy Fung

Methods and apparatus for processing a substrate are provided. For example, a method of processing a substrate comprises supplying oxygen (O) into a processing volume of an etch chamber to react with a silicon-based hardmask layer atop a base layer of ruthenium to form a covering of an SiO-like material over the silicon-based hardmask layer and etching the base layer of ruthenium using at least one of Oor chloride (Cl) while supplying nitrogen (N) to sputter some of the SiO-like material onto an exposed ruthenium sidewall created during etching.

Methods and apparatus for processing a substrate

A method of forming an interconnect structure for semiconductor devices is described. The method comprises etching a patterned interconnect stack for form first conductive lines and expose a top surface of a first etch stop layer; etching the first etch stop layer to form second conductive lines and expose a top surface of a barrier layer; and forming a self-aligned via.

Method of forming interconnect for semiconductor device

A method of fabricating a semiconductor structure is described. The method comprises forming at least one mandrel on a substrate, the at least one mandrel comprising a diamond-like carbon and having a top and two opposing sidewalls, the diamond-like carbon comprising at least 40% sphybridized carbon atoms. The mandrel may be used in Self-Aligned Multiple Patterning (SAMP) processes.

Diamond-like carbon as mandrel

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Sunnyvale, CA, United States of America

Chi Lu