Taiwan Semiconductor Manufacturing Comp. Ltd.

Chi-Hung Liao

Min-Cheng Wu

Wei Chang Cheng

Po-Ming Shih

Yueh Lin Yang

Yueh-Lin Yang

Wei-Chang Cheng

Yung-Yao Lee

Chin-Szu Lee

Yi-Ming Dai

Fei-Gwo Tsai

Szu-Hua Wu

Chien-Hung Wang

Kuei-Shun Chen

Shih-Chi Fu

Tzong-Sheng Chang

Jui-Ping Chuang

Meng-Wei Chen

Hsueh-Yi Chung

Wei-Ti Hsu

Jung-Tang Wu

Yung-Cheng Chen

Li-Kong Turn

Liang-Yueh Ou Yang

Jhun Hua Chen

Cheng-Kuang Chen

Ming-Hsun Lin

Teng Kuei Chuang

Yu-Hsiang Ho

Cheng-Mu Lin

Sheng-Liang Pan

Chun-Chih Lin

Yu-Yu Chen

Cheng-Yu Chu

Chia-Hung Tsai

Yu-Jen Chien

Ping-Hsu Chen

Ming-Yi Lee

Jui-Hung Ho

Yi-Chang Sung

Shao Tzu Lien

Louie Liu

Ju-Wei Liao

T S Lo

Heng-Hsin Liu

Chun-Hung Lin

Yih-Ann Lin

Chia-Der Chang

Kuo-Liang Lu

Te-Fu Tseng

Wei-Yu Su

Chun-Hung Kung

Yu Hsi Wang

Chai-Der Chang

Chun-Sheng Wang

Yung-cheng Chen

Hsin-Chun Chiang

Yan-Wei Tien

Ham-Ming Hsieh

Shun-Jiang Chiang

Chien-Hsing Wu

Guan-Yu Lin

Dean-E Lin

Yao-Wei Tien

A method of fabricating a semiconductor device includes providing a first substrate and forming a resist layer over the first substrate. In some embodiments, the method further includes performing an exposure process to the resist layer. The exposure process includes exposing the resist layer to a radiation source through an intervening mask. In some examples, the intervening mask includes a second substrate, a multi-layer structure formed over the second substrate, a capping layer formed over the multi-layer structure, and an absorber layer disposed over the capping layer. In some embodiments, the absorber layer includes a first main pattern area and an opening area spaced a distance from the first main pattern area. In various examples, the method further includes, after performing the exposure process, developing the exposed resist layer to form a patterned resist layer.

EUV photomask and related methods

An apparatus for reducing hydrogen permeation of a mask is provided when generating extreme ultraviolet (EUV) radiation. The apparatus includes a mask stage configured to hold the mask, a hydrogen dispensing nozzle configured to eject hydrogen below the mask, and a trajectory correcting assembly. The trajectory correcting assembly includes a correcting nozzle and a gas flow detector. The correcting nozzle is configured to dispense at least one flow adjusting gas to adjust a trajectory of the hydrogen away from the mask to reduce hydrogen permeation at an edge of the mask. The gas flow detector is configured to measure a variation of an airflow of the hydrogen adjusted by the at least one flow adjusting gas.

Methods and apparatus for reducing hydrogen permeation from lithographic tool

A lithography apparatus includes a wafer chuck configured to hold a wafer, a fluid source configured to contain a fluid to be applied towards the wafer during a lithography process, a dispensing nozzle positioned above the wafer chuck and in fluid communication with the fluid source, the dispensing nozzle having an adjustable cross-section, and a mechanical mechanism operable to apply a force towards an outer surface of the dispensing nozzle to change the adjustable cross-section.

Dispensing nozzle design and dispensing method thereof

A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become energized and emit extreme ultraviolet radiation. A collector reflects the extreme ultraviolet radiation toward a photolithography target. The photolithography system reduces splashback of the tin droplets onto the receiver by generating a net electric charge within the droplets using a charge electrode and decelerating the droplets by applying an electric field with a counter electrode.

Droplet splash control for extreme ultraviolet photolithography

A magnetic shield reduces external noise in a chamber including a target and at least one electromagnet for copper physical vapor deposition (PVD). The shield may have a thickness in a range from approximately 0.1 mm to approximately 10 mm to provide sufficient protection from radio frequency and other electromagnetic signals. As a result, copper atoms in the chamber undergo less re-direction from external noise. Additionally, even when hardware failure occurs during PVD (e.g., an electromagnet malfunctions, a wafer stage is not level, and/or a flow optimizer induces too much shift, among other examples), the copper atoms are less susceptible to small re-directions from external noise. As a result, back end of line (BEOL) and/or middle end of line (MEOL) conductive structures are formed in a more uniform manner, which increases conductivity and improves lifetime of an electronic device including the BEOL and/or MEOL conductive structures.

Semiconductor tool for copper deposition

A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.

Method and apparatus for improving critical dimension variation

A scanner includes a light source configured to apply a light to a backside of a wafer. The light is reflected from the backside of the wafer. A first mirror is configured to receive the light from the backside of the wafer and reflect the light. A sensor is configured to receive the light from the first mirror and generate an output signal indicative of a backside topography of the wafer.

System and method for correcting non-ideal wafer topography

A method includes emitting, by a first portion of an optical inspection instrument, a radiation toward a supporting surface of a chuck, wherein the chuck is configured for fixing a semiconductor workpiece on the supporting surface, and the optical inspection instrument faces the supporting surface; receiving, by a second portion of the optical inspection instrument, a reflection of the radiation reflected from the chuck; analyzing the reflection of the radiation; determining whether a particle is present on the supporting surface of the chuck based on the analyzing the reflection of the radiation; and removing the particle by using a cleaning tool comprising an exhaust duct.

Method for cleaning electrostatic chuck

A method comprises cleaning a surface of a reticle by irradiating the surface of the reticle in a first exposure device for a predetermined irradiation time. A layout pattern of the reticle is projected onto a photo resist layer of a wafer in a second exposure device by an EUV radiation. The photo resist layer is developed to generate a photo resist pattern on the wafer. A surface of the wafer is imaged to generate an image of the photo resist pattern on the wafer. The generated image of the photo resist pattern is analyzed to determine critical dimension uniformity (CDU) of the photo resist pattern. The predetermined irradiation time is adjusted until the determined CDU satisfies a predetermined criterion.

Reduce mask defect impact by contamination decompose

A method includes detecting a location of a particle on a bottom surface of an electrostatic chuck; moving a platform to a position under the bottom surface of the electrostatic chuck and right under the particle; and rotating the platform about a center of the platform to remove the particle from the bottom surface of the electrostatic chuck.

A method includes holding a mask using an electrostatic chuck. The mask includes a substrate having a first bump and a second bump separated from the first bump and a patterned layer. The first bump and the second bump face the electrostatic chuck. The substrate is between the patterned layer and the electrostatic chuck. The first bump and the second bump are spaced apart from the patterned layer. The first bump and the second bump are ring strips in a top view, and the first bump has a rectangular cross section and the second bump has a triangular cross section. The method further includes generating extreme ultraviolet (EUV) radiation using an EUV light source; and directing the EUV radiation toward the mask, such that the EUV radiation is reflected by the mask.

Method for lithography process

A method of preventing drippage in a fluid dispensing system. The fluid dispensing system includes a first automatic control valve (ACV), an input of the first ACV connected to fluid-source of fluid, the first ACV having positions ranging from fully closed to fully open, and a second ACV, an input of the second ACV being connected to an output of the first ACV, and an output of the second ACV being connected to a nozzle, the second ACV having positions ranging from fully closed to fully open. The method includes generating a first proxy signal representing at least a first indirect measure of a position of the first ACV. The method includes recognizing, based on at least the first proxy signal that a failure state exists in which the first ACV has failed to close. The method includes causing the second ACV to close when the failure state exists.

Method of operating drippage prevention system

A method includes shooting a primary droplet and a satellite droplet from a droplet generator along a common initial direction; applying a force to the primary droplet and the satellite droplet, wherein after applying the force, the primary droplet has a first deflection toward a first direction different than the common initial direction, and the satellite droplet has a second deflection toward a second direction different than the common initial direction, wherein the second deflection of the satellite droplet is greater than the first deflection of the primary droplet; and generating an extreme ultraviolet (EUV) light using an excitation laser hitting the primary droplet with the first deflection.

Lithography system and operation method thereof

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Taipei, Taiwan

Chi-Hung Liao