United Microelectronics Corp.

Winbond Electronics Corporation

Chi-Hung Chan

Shih-Cheng Chen

Kuan-Chun Lin

Yung-Teng Tsai

Chun-Chiao Tseng

Chung-Chih Hung

Hung-Ming Su

Chih-Chieh Chou

A layout for measuring an overlapping state includes a layout region, a first dummy active area region, and dummy component regions. The first dummy active area region is located in the layout region. The dummy component regions are stacked in the layout region. At the moment when one of the dummy component regions is formed on the first dummy active area region, the one of the dummy component regions and the first dummy active area region have a first overlapping region, and the first overlapping region does not include other dummy component regions among the dummy component regions.

Layout for measuring overlapping state

A test structure for electron beam inspection and a method for defect determination using electron beam inspection are provided. The test structure for electron beam inspection includes a semiconductor substrate, at least two conductive regions disposed on the semiconductor substrate, a connection structure disposed on the two conductive regions, and a cap dielectric layer disposed on the connection structure. The method for defect determination using the electron beam inspection includes the following steps. An electron beam inspection is preformed to a test structure with an instant detector and a lock-in amplifier. Signals received by the detector within a period of time are amplified by the lock-in amplifier. A defect in the test structure is determined by monitoring the signals received by the detector and amplified by the lock-in amplifier. The inspection accuracy is improved by the test structure and the method for defect determination in the present invention.

Test structure for electron beam inspection and method for defect determination using electron beam inspection

Growing community of inventors

Taichung, Taiwan

Chi-Hung Chan