Via Technologies, Inc.

Chi-Hsing Hsu

Jimmy Hsu

Wen-Yuan Chang

Kenny Chang

Hsing-Chou Hsu

Yuan-Tsang Liaw

Sheng-Yuan Lee

Kwun-Yao Ho

Moriss Kung

Hung-Wen Shih

A chip package is provided, which includes a dielectric layer, at least a conductive layer, a chip, a wiring layer and at least a conductive via. The dielectric layer has a first surface, a second surface opposite to the first surface and a plurality of lateral surfaces joined between the first surface and the second surface. One of the lateral surfaces has at least a groove, wherein the groove is extended from the first surface to the second surface. The conductive layer is disposed on the wall of the groove. The chip is inserted in the dielectric layer. The wiring layer is located on the first surface and electrically connected to the conductive layer. The conductive via is located in the dielectric layer to electrically connect the chip to the wiring layer.

Chip package and stacked structure of chip packages

A package module is provided. The package module includes a substrate having a surface including a die region. A die is disposed in the die region of the surface on the substrate. A flexible heat spreader conformally covers the surface of the substrate and the die. The invention also discloses an electronic device with the package module.

Electronic device with flexible heat spreader

A package includes a carrier, a first chip, a first dielectric layer and at least one first connecting part. The carrier has a first surface and a second surface, and at least one first pad is disposed on the second surface. The first chip is disposed on the first surface. The first dielectric layer is disposed on the first surface and covers the first chip. The first connecting part is disposed in the first dielectric layer and disposed around an edge of the first chip to electrically connect the first chip with the first pad. A package module of the package is also disclosed.

Package and package module of the package

A chip structure with a bevel pad row comprises a substrate, a plurality of middle pad rows, and a bevel pad row. The substrate has an active surface including a middle wire bonding area and a corner wire bonding area. The middle wire bonding area is adjacent to a side of the active surface. The corner wire bonding area is adjacent to the side and a end of the middle wire bonding area, and the corner wire bonding area has a bevel edge with an acute incline angle to the side. The middle pad rows are disposed in the middle wire bonding area, and the bevel pad row is disposed along the bevel edge of the corner wire bonding area. The bevel pad row has a plurality of bevel pads, and the quantity of which is greater than that of the middle pad rows in the middle wire bonding area.

Chip structure with bevel pad row

A multi-conducting through hole structure is provided. The multi-conducting through hole structure has a substrate, at least two signal lines and at least a reference line. The substrate has a through hole passing therethrough. The signal lines are disposed on a portion of an inner surface of the through hole and extended through the through hole. The reference line is disposed on a portion of the inner surface of the through hole and extended through the through hole, wherein the reference line is disposed between the lines for signal. Because the signal lines are separated by the reference line, the electromagnetic coupling generated by signals can be reduced to lower the cross-talk interference between signals passing through the through hole, so as to promote the signal-transmission quality.

Multi-conducting through hole structure

A chip structure includes a substrate with at least an arrangement of side pads on an active surface of the substrate and adjacent to one side of the active surface. The arrangement of side pads includes an outer pad row, a middle pad row and an inner pad row disposed along the extension direction of the side. The middle pad row is further away from the side than the outer pad row. The inner pad row is further away from the side than the middle pad row. Pads of the middle pad row and pads of the inner pad row are staggered. One non-signal pad of the middle pad row is located between two adjacent signal pads of the inner pad row, and one non-signal pad of the inner pad row is located between two adjacent signal pads of the middle pad row.

Chip structure with arrangement of side pads

A circuit substrate and a method of manufacturing a slot-shaped plated through slot thereon are provided. The circuit substrate has a linear slot. A slot-shaped plated through hole with a multiple transmission paths is formed in the linear slot so that a multiple of signals can be transmitted through the linear slot at one time. The circuit substrate and the method of manufacturing the slot-shaped plated through hole thereon can increase the level of integration of the circuit, decrease the average routing length of the circuit, boost the production efficiency and lower the production cost.

Circuit substrate and method of manufacturing plated through slot thereon

A signal transmission structure is provided. The structure mainly comprises at least a conductive via, at least a via land and a conductive wall. One end of the conductive via is connected to the via land. The conductive wall covers only a portion of the inner wall of a through hole in the core layer of a circuit substrate. The conductive wall has a semi-circular or a C-shaped structure. Therefore, when a signal passes the conductive via and the via land of the circuit substrate through the conductive wall in the interior of the via, because of a more continuous impedance between the via land and the conductive wall, signal reflection due to impedance mismatch along the signal transmission pathway can be reduced to enhance signal transmission quality.

Signal transmission structure and circuit substrate thereof

A multi-chip structure at least including a first chip, a second chip and a first thermal-conductive layer is provided. The first chip has a first surface and a plurality of first pads disposed on the first surface. The second chip has a second surface facing the first surface and a plurality of second pads disposed on the second surface. The first thermal-conductive layer is disposed between the first chip and the second chip and includes a thermal-conductive area, a plurality of first electrical connection members and a plurality of first dielectric areas. The first electrical connection members disposed in the first thermal-conductive layer are used to electrically connect the first surface and the second surface. The first dielectric areas surround and insulate the first electrical connection members from the thermal-conductive area.

Multi-chip structure

A bumpless chip package including at least a panel-shaped component, a chip, an interconnection structure and a conductive channel is provided. The chip is disposed on the panel-shaped component. The chip has a plurality of chip pads disposed on an active surface of the chip. The interconnection structure is disposed on the panel-shaped component and the chip. The interconnection structure has an inner circuit and a plurality of contact pads. The contact pads are disposed on a contact surface of the interconnection structure. At lease one chip pad is connected electrically to at least one contact pad by the inner circuit. The conductive channel extends from the active surface of the chip to a side surface thereof adjacent to the active surface. One end of the conductive channel is electrically connected to at least one chip pad and the other end thereof is electrically connected to the panel-shaped component.

Bumpless chip package

A signal transmission structure suitable for a multi-layer circuit substrate comprising a core layer and at least a dielectric layer is provided. The signal transmission structure according to the present invention comprises a first via landing pad and a reference plane. The first via landing pad is disposed on a first surface of the core layer, and covering one end of the through hole of the core layer. The dielectric layer covers the first via landing pad and the first surface of the core layer. And the first reference plane is disposed above the dielectric layer, having a first opening disposed above one end of the through hole. Wherein, the area where the first reference plane is projected on the first surface of the core layer does not overlap with the area where the first via landing pad is projected on the first surface of the core layer.

A semiconductor packaging substrate and a process for producing the same is disclosed. An internal circuit is formed by lamination. Then, external circuit is formed on the internal circuit by build-up technology. The substrate can be used as a flip-chip ball grid array packaging substrate with high density and small pitch. Furthermore, the substrate of the invention has a plurality of bonding pads thereon. The bump pads are divided into power/ground bump pads, first signal bump pads, and second signal bump pads. The first signal bump pads surround the power/ground bump pads and are surrounded by the second signal bump pads.

Semiconductor packaging substrate and method of producing the same

A chip package is provided. The chip package includes at least one chip, an interconnection structure, a plurality of second pads and at least one panel-shaped component, wherein the chip includes a plurality of first pads on a surface thereof. The interconnection structure is disposed on the chip, and the first pads of the chip are electrically coupled to the interconnection structure. The second pads are disposed on the interconnection structure, and the panel-shaped component is embedded in the interconnection structure. The panel-shaped component also includes a plurality of electrodes on its two opposite surfaces, and the second pads are electrically coupled to the first pads of the chip through the interconnection structure and the panel-shaped component.

Chip package with embedded component

A bump-less chip package is provided. The bump-less chip package includes a chip, an interconnection structure and a panel-shaped component. The panel-shaped component has a plurality of electrical terminals on a first surface thereof. The back surface of the chip is disposed on the first surface of the panel-shaped component, and the chip has a plurality of first pads on the active surface thereof away from the panel-shaped component. The interconnection structure is disposed on the first surface of the panel-shaped component and the active surface of the chip. The first pads of the chip may electrically connect with the electrical terminals of the panel-shaped component through the interconnection structure. Furthermore, the interconnection structure has a plurality of second pads on the surface away from the chip.

Chip package with embedded panel-shaped component

A circuit structure for a package substrate or a circuit board is provided. The circuit structure has a dielectric layer with an upper surface and a lower surface, at least a first line and at least a second line. The first line is disposed on the dielectric layer on which a base of the first line is aligned with the upper surface. In addition, the second line is disposed on the dielectric layer on which a base of the second line is embedded below the upper surface. Since the second line is embedded into the dielectric layer, the distance with a reference plane is reduced and the crosstalk between the signals is further effectively reduced.

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Taipei Hsien, Taiwan

Chi-Hsing Hsu