Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Chi-hoon Lee

Young-hoon Park

Hyo-dong Ban

Eun-young Minn

Yu-sin Yang

Myoung-hee Han

Sung-hoon Kho

Young-hoon Sohn

Sung-yoon Ryu

Su-il Cho

Duck-mahn Oh

Hyun-su Kwak

Jong-an Kim

Jung-won Kim

Si-hyeon Choi

A thickness prediction network learning method includes measuring spectrums of optical characteristics of a plurality of semiconductor structures each including a substrate and first and second semiconductor material layers alternately stacked thereon to generate sets of spectrum measurement data, measuring thicknesses of the first and second semiconductor material layers to generate sets of thickness data, training a simulation network using the sets of spectrum measurement data and the sets of thickness data, generating sets of spectrum simulation data of spectrums of the optical characteristics of a plurality of virtual semiconductor structures based on thicknesses of first and second virtual semiconductor material layers using the simulation network, each of the first and second virtual semiconductor layers including the same material as the first and second semiconductor material layers, respectively; and training a thickness prediction network by using the sets of spectrum measurement data and the sets of spectrum simulation data.

Thickness prediction network learning method, semiconductor device manufacturing method, and semiconductor material deposition equipment

A method for nondestructive measurement of an underlying layer thickness includes irradiating, with a pump laser pulse, a sample to induce generation of an acoustic wave in the sample such that the acoustic wave propagates through the sample over time, where the sample includes a substrate, an underlying layer on the substrate, and an overlying layer on the underlying layer and the underlying layer is isolated from an exterior of the sample by at least the overlying layer, irradiating the sample with a probe laser pulse after irradiating the sample with the pump laser pulse, determining a reflectance variation of the sample over time, based on monitoring a variation of a reflection of the probe laser pulse from the sample over time, to generate a first graph showing a variation of reflectance of the sample over time, and determining a thickness of the underlying layer based on the first graph.

Methods for nondestructive measurements of thickness of underlying layers

A fuse area structure in a semiconductor device and a method of forming the same are provided. The fuse area structure includes a protection film formed of a passivation film for preventing moisture from seeping into the sidewall of an exposed fuse opening. In order to form the protection film, an etching stop film is formed on a fuse line, and the fuse opening is formed at the same time using the etching stop film when a contact hole required for the semiconductor device is formed. A conductive material layer for forming an upper interconnection layer is formed on the entire surface of a resultant structure on which the contact hole and the fuse opening are formed. The conductive material layer formed on the fuse opening is removed. The exposed etching stop film is removed. Finally, the fuse area is completed by forming a passivation film on the entire surface of the resultant structure and removing the passivation film formed on the bottom of the fuse opening into which laser is to be irradiated. Moisture is effectively prevented from seeping into the interfaces between interlayer dielectric films since the protection film of the passivation film is formed on the sidewall of the fuse opening without an additional process. Also, an additional photolithography process for forming the fuse opening is not necessary since the fuse opening is simultaneously formed when the contact hole is formed.

Fuse area structure including protection film on sidewall of fuse opening in semiconductor device and method of forming the same

An integrated circuit chip having an anti-moisture-absorption film at the edge thereof and a method of forming the anti-moisture-absorption film are provided. In the integrated circuit chip which has predetermined devices inside and whose uppermost layer is covered with a passivation film, a trench is formed by etching interlayer dielectric films to a predetermined depth along the perimeter of the integrated circuit chip to be adjacent to the edge of the integrated circuit chip and an anti-moisture-absorption film is formed to fill the trench or is formed on the sidewall of the trench to a predetermined thickness, in order to prevent moisture from seeping into the edge of the integrated circuit chip. Moisture is effectively prevented from seeping into the edge of the chip by forming the anti-moisture-absorption film at the edge of the chip using the conventional processes of manufacturing the integrated circuit chip without an additional process.

Integrated circuit chip having anti-moisture-absorption film at edge thereof and method of forming anti-moisture-absorption film

A fuse area structure in a semiconductor device and a method of forming the same are provided. A ring-shaped guard ring which surrounds a fuse opening, for preventing moisture from seeping into the side surface of the exposed fuse opening, is included. The guard ring is integrally formed with a passivation film. In order to form the guard ring, a guard ring opening etching stop film is formed on a fuse line. A guard ring opening is formed using the etching stop film, and a contact hole is formed in a peripheral circuit. A conductive material layer for forming an upper interconnection layer is formed on the entire surface of a resultant structure on which the contact hole and the guard ring opening are formed. The conductive material layer formed on the guard ring opening is removed. The exposed etching stop film is removed. Finally, a passivation film is deposited on the entire surface of the resulting structure. Accordingly, the guard ring formed of the passivation film filling the guard ring opening is formed. It is possible to form the guard ring without an additional process, to thus effectively prevent moisture from seeping into interfaces between interlayer dielectric films. Also, an additional photolithography process for forming the guard ring is not necessary since the guard ring opening and the contact hole in the peripheral circuit are simultaneously formed.

Fuse area structure having guard ring surrounding fuse opening in semiconductor device and method of forming the same

Method of forming fuse area structure including protection film on sidewall of fuse opening in semiconductor device

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Suwon, South Korea

Chi-hoon Lee