Hynix Semiconductor Inc.

Hyundai Electronics Industries Co. Ltd.

Cheol-Kyu Bok

Seo-Min Kim

Jae-chang Jung

Seung Chan Moon

Ki-Soo Shin

Cha-Won Koh

A cross-linking polymer for an organic anti-reflective coating that is able to improve the uniformity of an ultra-fine photoresist pattern formed using a photolithography process and an ArF light source with 194 nm wavelength. Organic anti-reflective coatings including the same and a method for forming a photoresist pattern using the same are also disclosed. The disclosed cross-linking polymer is capable of preventing scattered reflection from a bottom film layer, eliminating standing wave effect due to alteration of thickness of the photoresist film, and increasing uniformity of the thickness of photoresist pattern. At the same time, the disclosed cross-linking pattern increases the etching velocity of the organic anti-reflective coating so that it can be easily removed.

Cross-linking polymer for organic anti-reflective coating, organic anti-reflective coating composition comprising the same and method for forming photoresist pattern using the same

The present invention relates to a semiconductor memory device and a method for fabricating the same. Particularly, the semiconductor memory device includes at least more than two capacitors to decrease the thickness of an insulation layer and increase the size of each capacitor, wherein the thickness of the insulation layer and the size of the capacitor are factors for increasing parasitic capacitance and leakage currents. Also, the two capacitors are arranged diagonally, thereby widening the width of each capacitor formed. Furthermore, in case of forming the double capacitors according to the preferred embodiment of the present invention, an additional reticle is not required to form the contact holes for each capacitor due to their inverted disposition relationship.

Semiconductor memory device and method for fabricating the same

A semiconductor memory device and a method for fabricating the same. Particularly, the semiconductor memory device includes at least two capacitors to decrease the thickness of an insulation layer and increase the size of each capacitor, wherein the thickness of the insulation layer and the size of the capacitor are factors for increasing parasitic capacitance and leakage currents. Also, the two capacitors are arranged diagonally, thereby widening the width of each capacitor formed. Furthermore, in forming double capacitors according to the preferred embodiment of the present invention, an additional reticle is not required to form the contact holes for each capacitor due to their inverted disposition relationship.

A method is disclosed for forming fine photoresist patterns on semiconductor devices using a modified, two-step dry develop process using a fluorine-containing gas to produce hydrophobic SiO passivation layers on the sidewalls of the photoresist patterns. These passivation layers increase the structural stability of the fine photoresist patterns and prevent moisture within an air from cohering on the photoresist patterns when the semiconductor substrate is subsequently exposed to the air. Accordingly, the present invention improves the processing margins for very high aspect ratio photoresist patterns resulting in reduced rework and increased yield on very highly integrated semiconductor devices.

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Ichon-shi, South Korea

Cheol-Kyu Bok