Applied Materials, Inc.

Chengyu Liu

Li-Qun Xia

Xianmin Tang

Yong Cao

Jothilingam Ramalingam

Bo Xie

Shane Lavan

Yijun Liu

Ruitong Xiong

Wei Dou

Mingdong Li

Peijiao Fang

Embodiments of the disclosure describe a method including sputtering material from a physical vapor deposition (PVD) target disposed within a processing chamber. The sputtered material is filtered by an electrode. Filtering the sputtered material causes a first portion of the sputtered material to pass through apertures formed in the electrode and towards a substrate disposed on a substrate support. The first portion of the sputtered material is deposited on a surface of the substrate. Depositing the first portion of the sputtered material includes delivering a pulsed voltage (PV) waveform to an additional electrode that is disposed within the substrate support. The substrate support is disposed within the processing chamber. The PV waveform is configured to apply a pulsed DC bias to the additional electrode. The application of the pulsed DC bias includes forming an etch-to-deposition ratio greater than or equal to 0.5.

Pulsed voltage waveform delivery for deposition

A method for dielectric filling of a feature on a substrate yields a seamless dielectric fill with high-k for narrow features. In some embodiments, the method may include depositing a metal material into the feature to fill the feature from a bottom of the feature wherein the feature has an opening ranging from less than 20 nm to approximately 150 nm at an upper surface of the substrate and wherein depositing the metal material is performed using a high ionization physical vapor deposition (PVD) process to form a seamless metal gap fill and treating the seamless metal gap fill by oxidizing/nitridizing the metal material of the seamless metal gap fill with an oxidation/nitridation process to form dielectric material wherein the seamless metal gap fill is converted into a seamless dielectric gap fill with high-k dielectric material.

Methods for seamless gap filling of dielectric material

Embodiments of methods and apparatus for reducing particle formation in physical vapor deposition (PVD) chambers are provided herein. In some embodiments, a method of reducing particle formation in a PVD chamber includes: performing a plurality of first deposition processes on a corresponding series of substrates disposed on a substrate support in the PVD chamber, wherein the PVD chamber includes a cover ring disposed about the substrate support and having a texturized outer surface, and wherein a silicon nitride (SiN) layer having a first thickness is deposited onto the texturized outer surface during each of the plurality of first deposition processes; and performing a second deposition process on the cover ring between subsets of the plurality of first deposition processes to deposit an amorphous silicon layer having a second thickness onto an underlying silicon nitride (SiN) layer.

Methods of reducing particles in a physical vapor deposition (PVD) chamber

Growing community of inventors

San Jose, CA, United States of America

Chengyu Liu