Sj Semiconductor (jiangyin) Corporation

Hauwei Device Co., Ltd.

Other

Chengchung Lin

Yenheng Chen

Chengtar Wu

Jangshen Lin

Yuedong Qiu

Xingtao Xue

Chihon Ho

Hanlung Tsai

Mingchih Chen

Jiashan Yin

Zuyuan Zhou

Yayuan Xue

Xianghui Zhang

Chentar Wu

Qifeng Cai

Rui Yu

Han Xu

Han Huang

Chihhung Ho

The present disclosure provides a wafer-level ASIC 3D integrated substrate, a packaging device and a preparation method. The substrate includes a first wiring layer, conductive pillars, a molding layer, a second wiring layer and solder balls. The first wiring layer includes a first dielectric layer and a first metal wire layer, the first metal wire layer is exposed from a top surface of the first dielectric layer. The second wiring layer includes a second dielectric layer and a second metal wire layer. The conductive pillars are disposed between the first wiring layer and the second wiring layer, two ends of each conductive pillar are electrically connected to the first metal wire layer and the second metal wire layer, respectively. The molding layer molds the conductive pillars. The solder balls are disposed on a side of the second wiring layer and electrically connected to the second metal wire layer.

Wafer-level ASIC 3D integrated substrate, packaging device and preparation method

The present disclosure provides an antenna packaging structure radiating electromagnetic waves in a horizontal direction parallel to the device plane and a method making the same. The method includes: providing a support substrate, and forming a separation layer; forming a rewiring layer on the separation layer; forming an antenna array layer on the rewiring layer, the antenna array layer is electrically connected to the metal wire layer; the antenna array layer includes a plurality of antennas which radiates e-m waves in a horizontal direction; each antennas comprises first metal sheets extending along a first direction and second metal sheets extending along a second direction, the first metal sheets are arranged with sheets in parallel and spaced by an sheet-to-sheet interval, second metal sheets are arranged with sheets in parallel and spaced by an sheet-to-sheet interval; forming a molding material layer, which molds the antenna array layer.

Packaging structure radiating electromagnetic waves in horizontal direction and method making the same

The present disclosure provides a chip packaging structure and a method for preparing the same. The packaging structure includes a glass substrate, metal connecting posts, a first packaging layer, a connection layer, semiconductor chips, a filler layer, a second packaging layer, a controlled collapse chip connection (C4) layer, a base substrate, and a heat sink housing. In the present disclosure, metal connecting posts are pre-formed in a glass substrate, so that the glass substrate serves as an intermediate conduction layer, and the semiconductor chips and the C4 layer are respectively formed at opposite ends of the metal connecting posts to perform electrical connections, so that the number of process steps for preparing the packaging structure is minimized and the manufacturing cost is reduced.

Packaging structure and method for preparing same

The present disclosure provides fan-out LED packaging structures and methods. The fan-out LED packaging structure at least comprises: an LED wafer, a packaging layer, a first redistribution layer, an IC control chip module, and a second redistribution layer. The LED wafer and the IC control chip module use metal wires of the first and second redistribution layers and metal-plated holes of the packaging layer to lead out and to control the LED wafer and the IC control chip. The present disclosure also provides fan-out LED packaging methods. The methods adopt metal plating in place of wire bonding, and adopt PI dielectric layers and rewiring layers in place of a base substrate, thus effectively reducing the LED package size.

Fan-out LED packaging structure and method

A wafer system-level three-dimensional fan-out packaging structure and a manufacturing method therefor. The method includes: forming a redistribution layer, where the redistribution layer includes a first surface and a second surface opposite to each other; forming a conductive connecting post on the second surface of the redistribution layer; bonding the patch element to the second surface of the redistribution layer; forming a plastic packaging layer on the second surface of the redistribution layer; thinning the plastic packaging layer; forming a plurality of solder bumps on a side of the plastic packaging layer that faces away from the redistribution layer; cutting the redistribution layer and the plastic packaging layer to obtain a number of first package structures; and bonding a second package layer to the first surface of the redistribution layer of one of the first package structures.

Wafer system-level three-dimensional fan-out three-dimensional fan-out packaging structure and manufacturing method thereof

The present disclosure provides a three-dimensional stacked fan-out packaging structure and a method making the same. The structure includes: a first semiconductor chip, a first packaging material layer, a metal connecting pillar, a first rewiring layer, a second rewiring layer, a second semiconductor chip, solder ball bumps, an underfill layer under the second semiconductor chip, and a second packaging material layer. The formed three-dimensional stacked fan-out packaging structure can package two sets of fan-out wafers in the three-dimensional direction. A single package stacked up after die-cutting has two sets of chips in the third-direction. The electrical signals of all chips in a single package can be controlled by arranging a first rewiring layer, a metal connecting post, and the second rewiring layer, so that more chips can be packaged in a single package, the integration of the package is improved, and the package volume can shrink.

Three-dimensional stacked fan-out packaging structure and method making the same

The present disclosure provides an antenna packaging structure radiating e-m waves in a horizontal direction and a vertical direction and a method making the same. The method includes: providing a support substrate, forming a separation layer on a surface of the support substrate; forming a rewiring layer on the separation layer; forming an antenna array layer on the rewiring layer, the antenna array layer is electrically connected to the metal wire layer; the antenna array layer includes first antennas and second antennas arranged in an array respectively, radiating e-m waves in the horizontal direction and the vertical direction respectively; forming a molding material layer; removing the support substrate and the separation layer; forming solder ball bumps on a surface of the rewiring layer away from the antenna array layer, the solder ball bumps are electrically connected to the metal wire layer; disposing a chip on the solder ball bumps.

Packaging structure radiating electromagnetic wave in horizontal direction and vertical direction and method making the same

The present disclosure provides a double-layer stacked 3D fan-out packaging structure and a method making the structure. The structure includes: a first semiconductor chip, a packaging material layer, a metal connecting pillar, a first rewiring layer, a second rewiring layer, a second semiconductor chip, solder ball bumps, and an underfill layer under the second semiconductor chip. The formed double-layer stacked 3D fan-out packaging structure is capable to package two sets of fan-out wafers in the three-dimension. A single package stacked up after die-cutting has two sets of chips in the third direction. The electrical signals of all chips in a single package can be controlled by arranging a first rewiring layer, a metal connecting post, and the second rewiring layer, so that more chips can be packaged in a single package, thus improving the package integration level and reducing the package volume.

Double-layer stacked 3D fan-out packaging structure and method making the same

The present disclosure provides a semiconductor structure and a method for preparing it. After planarization of the Cu layer, by means of wet etch process, Cu residues near an edge of a Cu post can be effectively removed, and a first height difference is configured to be between the Cu post and an insulating layer. Further, an Si substrate is then dry etched, so that a second height difference is configured to be between the Si substrate and the insulating layer, and the second height difference is arranged to be greater than the first height difference. In this way, a connection of Cu inside and outside the insulating layer may be further avoided, thereby effectively avoiding an influence on electrical properties of a device.

Semiconductor structure and method for preparing the same

The present invention provides a SiP structure and method for a light emitting diode (LED) chip. The packaging structure includes: a heat sink structure, a first chip, a first packaging layer, a second packaging layer, a rewiring layer, an LED chip, a printed circuit board (PCB), and a third packaging layer. In the present invention, chips with a plurality of functions, including the first chip, the LED chip, and the like, are integrated into one packaging structure through fan-out system-level packaging, to meet a plurality of different system functional requirements and improve the performance of the packaging system. By the rewiring layer, a metal connecting pillar, a metal lead wire, and the like, the first chip, the LED chip, and the PCB are electrically connected, to achieve a three-dimensional vertically stacked package thereby effectively reducing the area of a SiP and improving the integration of the packaging system.

System-level packaging structure and method for LED chip

A wafer system-level fan-out packaging structure and a manufacturing method. The method includes: forming a redistribution layer, where the redistribution layer includes a first surface and an opposite second surface; providing a patch element, and bonding the patch element to the second surface; providing a die having a bump disposed on a front side, and bonding the front side of the die to the second surface of the redistribution layer through the bump; and forming a plastic packaging layer on the second surface of the redistribution layer, where the plastic packaging layer covers the patch element, back side and side surfaces of the die. In the wafer system-level fan-out packaging structure and the manufacturing method of the present disclosure, the die and the patch element are packaged in a plastic packaging layer, and the die and the patch element are connected and let out by the redistribution layer.

Wafer system-level fan-out packaging structure and manufacturing method

The present disclosure provides a chip package structure having a heat sink and a method making the same. The method includes: bonding a chip to a top surface of a package substrate and forming a heat-conducting lead having an arc-shape and placed on the chip in a vertical direction, a first end of the heat-conducting lead is connected with a surface of the chip, and a second end is connected with a solder ball; forming a plastic package material layer that protects the chip and the heat-conducting lead; forming a heat-conducting adhesive layer on the surface of the plastic package material layer, where the heat-conducting adhesive layer is connected with the solder ball on the second end of the heat-conducting lead; and forming a heat dissipation layer on a surface of the heat-conducting adhesive layer. With the present disclosure, the heat dissipation efficiency of the chip is effectively improved.

Semiconductor package structure with heat sink and method preparing the same

A chip packaging structure and a method for preparing the same are disclosed. The method includes: providing a wafer having a first surface and a second surface, forming a first redistribution layer on the first surface, wherein the wafer includes TSVs having first ends exposed from the wafer; forming welding pads electrically connected to the TSVs through the first redistribution layer; forming a trimming groove in an edge area of the wafer; bonding the first surface of the wafer to a first supporting substrate, and thinning the second surface of the wafer to expose the second ends of the TSVs; forming, on the second surface of the wafer, solder balls electrically connected to the TSVs through a second redistribution layer; bonding the second surface of the wafer to a second supporting substrate, and peeling off the first supporting substrate; and connecting the welding pads to a semiconductor chip.

Chip packaging structure and method for preparing same

The present disclosure provides a fan-out packaging structure and a method of fabricating the same. The fan-out packaging structure includes a redistribution layer, a passivation layer, a semiconductor chip, a first packaging layer, a groove, first metal bumps, second metal bumps, an adapter board, a stacked chip package, a passive element, and a filling layer. By means of the present disclosure, various chips performing different functions can be integrated into one packaging structure, thereby improving the integration level of the fan-out packaging structure. By means of the redistribution layer, the adapter board, and the first and second metal bumps, a three-dimensional vertically stacked packaging is achieved. As the result, in addition to improved integration level, the conduction paths in the packaging structure can be effectively shortened, thereby reducing power consumption, increasing the transmission speed, and increasing the data processing capacity.

Fan-out packaging structure and method

The present disclosure provides a fan-out packaging structure and a method for fabricating the fan-out packaging. The fan-out packaging structure includes a first redistribution layer, a second redistribution layer, metal connecting posts, a semiconductor chip, a first filling layer, a first packaging layer, a stacked chip package, a passive element, a second filling layer, a second packaging layer, and metal bumps. By means of the present disclosure, various chips having different functions can be integrated into one packaging structure, thereby improving the integration of the fan-out packaging structure. By means of the first redistribution layer, the second redistribution layer, and the metal connecting posts, a three-dimensional vertical stacked packaging is achieved. In this way, the integration level of the packaging structure can be effectively improved, and the conduction path can be significantly shortened, thereby reducing the power consumption, increasing the signal transmission speed, and increasing the data processing capacity.

Growing community of inventors

Jiangyin, China

Chengchung Lin