Himax Technologies, Inc.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Industrial Technology Research Institute

Institute for Information Industry

Elite Semiconductor Microelectronics Technology Inc.

Cheng-Hung Tsai

Wai-Pan Wu

Shen-Feng Tai

Chun-Jen Su

Shun-Tien Lee

Chun-Kai Chuang

Jui-Ni Li

Pei-Haw Tsao

Yuan-Ting Chen

Cheng-Ta Hsiao

Chih-Teng Liao

Xi-Zong Chen

Po-Hsuan Huang

Li-Lin Liu

Tsui-Mei Chen

Min-Sheng Kao

Nai-Cheng Lu

Chia-Tsung Tso

An-Tai Xu

Huang-Ting Hsiao

Chin-Yuan Chiang

Kun-Yi Shen

Guang-Feng Deng

Han-Wen Liu

Ying-Zhuan Liu

Hsiao Chien Lin

Chen-Shien Chen

Yaw-Guang Chang

Kuo-Chin Chang

Li-Huan Chu

Chih-Hsuan Lin

Hui-Min Wang

Fang-Tsun Chu

Chung-Wen Chang

Cheng-Chung Chen

Tsun Ku

Cheng-Da Shaw

Chiung-Hung Wang

Hsi Chung Chen

Chien-Yi Chang

Yu-Hsiang Lin

Wai Pan Wu

Chia-Hung Chiu

Zhi-Guo Zhu

Xue-Xia Cai

Heng-An Hsu

Yan-Hua Shu

Jen-Chieh Lin

Yao-Mao Liu

Wen-Juan Li

Jyun-Yan Liu

Chih-Chung Chien

Xuexia Cai

Chuan-Wen Chen

Chun-Yau Huang

Yong-Fu Wu

Chwan-Gwo Chyau

Chun-Sheng Lee

Heng-Xiao Chen

Hsiao-Chien Lin

A semiconductor device having source and drain regions in a semiconductor substrate, a transistor including a gate electrode over the semiconductor substrate, an isolation structure in the semiconductor substrate adjacent to the transistor, a first inter-dielectric layer (ILD) material over the isolation structure, and a capacitor film stack over the first ILD material that includes an isolation plate over and covering a capacitor plate, and a contact to the capacitor plate.

Semiconductor device with short-resistant capacitor plate

A method includes forming a dummy gate structure across a fin, in which the dummy gate structure has a dummy gate dielectric layer and a dummy gate electrode, forming gate spacers on sidewalls of the dummy gate structure, forming source/drain epitaxial structures on sides of the dummy gate structure, performing a first etch process to the dummy gate electrode such that a recessed dummy gate electrode remains over the fin, performing a second etch process to the gate spacers such that recessed gate spacers remain over the sidewalls of the dummy gate structure, removing the recessed dummy gate electrode and the dummy gate dielectric layer after the second etch process to form a recess between the recessed gate spacers, forming a gate structure overfilling the recess, and performing a third etch process to the gate structure such that a recessed gate structure remains between the recessed gate spacers.

Semiconductor device and forming method thereof

A calibration method and a calibration apparatus for a knob applicable to a touch panel are provided. The knob includes at least one sensing pad. The calibration method includes: obtaining sensed position(s) of each sensing pad by sensing a position of the sensing pad through the touch panel; and calculating a position of a center of the knob by using a formula of a radius of a circumscribed circle according the sensed position(s) of each sensing pad.

Calibration method and calibration apparatus for knob applicable to touch panel

A method of making a semiconductor device includes steps related to forming source and drain wells of a transistor in a semiconductor substrate; forming a gate electrode of the transistor over the semiconductor substrate; forming an isolation structure in the semiconductor substrate adjacent to the transistor; and depositing a first inter-dielectric layer (ILD) material over the transistor and the isolation structure. The method also includes steps for depositing a capacitor film stack over the first ILD material, forming a pattern in the capacitor film stack over the isolation structure, and forming a capacitor plate by etching a conductive material of the capacitor film stack. Etching the conductive material includes performing a liquid etch process with a selectivity of at least 16 with regard to other materials in the capacitor film stack.

A touch panel includes a cover lens located at top of the touch panel, plural touch sensor units, and plural sensing channels. The touch sensor units are disposed below the cover lens and arranged in rows and columns. The touch sensor units are disposed on the sensing channels. Each of touch sensor units acquires a sensing magnitude for identifying a position of the cover lens that touched by the stylus according to signals outputted by the sensing channels. The sensing magnitude of one of the touch sensor units is composed of the signals of the adjacent sensing channels located within a vertical projection of the one of the touch sensor units.

Touch panel

A touch screen includes a touch panel including a plurality of touch blocks, and a knob, being touch-sensitive and rotatable, disposed on top of the touch panel. An area of the touch panel not covered with the knob is defined as a first area, an area of the touch panel covered with the knob is defined as a second area, and touch blocks belonging to both the first area and the second area are defined as overlapped blocks. Sense signals associated with the overlapped blocks are de-emphasized.

Touch screen

A knob device is applicable to a touch panel. The knob device includes a knob cover, a plurality of sensing pads and a rotation sensing element. The plurality of sensing pads are fixedly arranged on the touch panel. A gap is form between two sensing pads. The plurality of sensing pads and gaps are distributed in a ring area around a center of an orthographic projection of the knob cover. The rotation sensing element is connected to the knob cover. When the knob cover is turned to be rotated, the rotation sensing element is rotated synchronously. When a user touches the knob device and the rotation sensing element overlaps one of the plurality of sensing pads, the touch panel generates a rotation sensing signal in response to a location of the rotation sensing element.

Knob device applicable to touch panel

An input buffer circuit includes an input differential amplifier unit, a differential amplifier stage, and a buffer. The input differential amplifier unit has input terminals and at least one output terminal, wherein at least two of the input terminals of the input differential amplifier unit are configured to be capacitively coupled respectively so as to provide at least one pair of signal paths for a first input signal and a second input signal of a differential input signal. The differential amplifier stage, coupled to the input differential amplifier unit, has first and second differential input terminals, and a corresponding output terminal, wherein the first and second differential input terminals are capable of being coupled to the first input signal and the second input signal respectively. The buffer, coupled to the output terminal of the differential amplifier stage, is used for outputting an output single-ended signal.

Input buffer circuit

A speech synthesis system includes an operating interface, a storage unit and a processor. The operating interface provides a plurality of language options for a user to select one output language option therefrom. The storage unit stores a plurality of acoustic models. Each acoustic model corresponds to one of the language options and includes a plurality of phoneme labels corresponding to a specific vocal. The processor receives a text file and generates output speech data corresponding to the specific vocal according to the text file, a speech synthesizer, and one of the acoustic models which corresponds to the output language option.

Speech synthesis system, method and non-transitory computer readable medium with language option selection and acoustic models

A touch panel includes a first electrode layer and a second electrode layer. The first electrode layer has transmitting electrodes arranged in transmitting channels and traces respectively coupled to the transmitting channels. The second electrode layer has receiving electrodes arranged in receiving channels. At least one of the traces, the transmitting channels and one of the receiving channels in proximity of the traces form touch detection blocks that respectively correspond to the transmitting channels. For each touch detection block, in a circle area overlapped with at least one of the traces and substantially in the touch detection block corresponding to one of the transmitting channels, a summation of areas of the corresponded transmitting channel and the trace coupled to the corresponded transmitting channel is substantially larger than a summation of areas of the other transmitting channels and the other traces.

Touch panel and touch display apparatus

A knob device is applicable to a touch panel. The knob device includes a knob cover; and a rotation sensing element. The rotation sensing element includes a base and a plurality of sensing pads connected to the knob cover. The rotation sensing element is arranged between the touch panel and the knob cover. The base is connected to the knob cover. When a user touches the knob device, the touch panel generates a rotation sensing signal in response to a location of the plurality of sensing pads. An orthographic projection of the knob cover on the touch panel is divided into a plurality of parts, the plurality of parts are distributed radially from a center of the orthographic projection of the knob cover, each sensing pad is located in a part and connected to another sensing pad located in another part adjacent to the part.

A sensor pattern and a capacitive touch screen are provided. The sensor pattern comprises: a plurality of unit blocks, and a first unit block of the unit blocks comprises: a first 1st-type sensor element, a first 2nd-type sensor element, and a second 2nd-type sensor element. The first 1st-type sensor element is disposed on a first patterned layer, having a border trace, two parallel main traces, a bridge, a first cell, and a second cell, wherein the first and second cells are not aligned. The first 2nd-type sensor element is disposed on a second patterned layer, having a main trace and a sub-trace, wherein the main trace surrounds the first cell of the first 1st-type sensor element. The second 2nd-type sensor element is disposed on the second patterned layer, having a main trace and a sub-trace, wherein the main trace surrounds the second cell of the first 1st-type sensor element.

Sensor pattern and capacitive touch screen

A knob device is applicable to a touch panel. The touch panel includes a plurality of panel sensors. The knob device includes a knob cover, a sensing pad, a compensation sensor and a switch. The sensing pad is arranged between the knob cover and the touch panel. The switch is configured to selectively connect the sensing pad to the compensation sensor. When a move event of the knob device occurs, the switch is turned on and the sensing pad is electrically connected to the compensate sensor through the switch, such that a feedback loop is generated by the sensing pad, the compensation sensor and the touch panel to change a quantity of electric charge of at least one of the plurality of panel sensors. When a touch and rotation event of the knob device occurs, a location of the sensing pad controls a rotation sensing signal.

A semiconductor device includes a substrate and at least one bump structure disposed over the substrate. The at least one bump structure includes a pillar formed of a metal having a lower solderability than copper or a copper alloy to a solder alloy disposed over the substrate. A solder alloy is formed directly over and in contact with an upper surface of the metal having the lower solderability than copper or a copper alloy. The pillar has a height of greater than 10 &#x3bc;m.

Semiconductor device with bump structure and method of making semiconductor device

An audio playback device receives an instruction from a user to select a target voice model from a plurality of voice models and assigns the target voice model to a target character in a text. The audio playback device also transforms the text into a speech, and during the process of transforming the text into the speech, transforms sentences of the target character in the text into the speech of the target character according to the target voice model.

Audio playback device and audio playback method thereof for adjusting text to speech of a target character using spectral features

Growing community of inventors

Tainan, Taiwan

Cheng-Hung Tsai