Taiwan Semiconductor Manufacturing Comp. Ltd.

Cheng-Hung Hu

Ming-Te Chen

Tsun-Jen Chan

Yi-Hann Chen

Kang Hua Chang

Yh-Hsiu Hsiao

Yi-Jiun Lee

Kan Hwa Chang

A system includes an implantation chamber; a warming chamber, wherein the warming chamber is outside of the implantation chamber and has a sidewall shared with the implantation chamber; a first robotic arm configured to move a first wafer from the implantation chamber into the warming chamber; and a second robotic arm configured to move a second wafer into the implantation chamber.

High-throughput system and method for post-implantation single wafer warm-up

A high throughput system for warming a wafer to a desired temperature after undergoing a low-temperature implantation process includes an implantation chamber, a wafer warming chamber configured to uniformly warm a single wafer, and a plurality of robotic arms to transfer wafers throughout the system. At each stage in the fabrication process, the robotic arms simultaneously work with multiple wafers and, therefore, the system provides a high throughput process. Also, the warming chamber may be a vacuum environment, thus eliminating the mist-condensation problem that results in wafer spotting.

Methods and apparatus for a carbon ion source head. An ionization chamber is configured to receive a process gas containing carbon and a noble carrier gas; a cathode is disposed in the ionization chamber and configured to emit electrons in thermionic emission; a graphite coating is provided on at least a portion of the cathode; and an outlet on the ionization chamber is configured to output carbon ions. A method for ion implantation of carbon is disclosed. Additional alternative embodiments are disclosed.

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Hsinchu, Taiwan

Cheng-Hung Hu