Applied Materials, Inc.

Cheng-Hsiung Matthew Tsai

Steven Victor Sansoni

Manjunatha P Koppa

Mukund Sundararajan

Aravind Kamath

Shreesha Y Rao

Vijay D Parkhe

John C Forster

Kirankumar Neelasandra Savandaiah

Jallepally Ravi

Michael Sterling Jackson

Song-Moon Suh

David Gunther

Bonnie T Chia

Tomoharu Matsushita

Robert Dinsmore

Xianmin Tang

Keith A Miller

Ananthkrishna Jupudi

Xiangjin Xie

Feng Chen

Zubin Huang

Joel M Huston

Tae Hong Ha

Glen T Mori

William R Johanson

Gwo-Chuan Tzu

Lu Chen

Jiang Lu

Alexander Jansen

Wenjing Xu

Hiroyuki Takahama

Carmen Leal Cervantes

Vinod Konda Purathe

Larry Frazier

Zhixiu Liang

Mei Po Yeung

Substrate support for a substrate processing chamber

Methods and apparatus for substrate position calibration for substrate supports in substrate processing systems are provided herein. In some embodiments, a method for positioning a substrate on a substrate support includes: obtaining a plurality of backside pressure values corresponding to a plurality of different substrate positions on a substrate support by repeatedly placing a substrate in a position on the substrate support, and vacuum chucking the substrate to the substrate support and measuring a backside pressure; and analyzing the plurality of backside pressure values to determine a calibrated substrate position.

Substrate position calibration for substrate supports in substrate processing systems

Deposition ring for physical vapor deposition chamber

Embodiments of substrate supports for use in substrate processing chambers are provided herein. In some embodiments, a substrate support includes: an upper assembly having a base plate assembly coupled to a lower surface of a cooling plate, wherein the base plate assembly includes a plurality of electrical feedthroughs, and wherein the cooling plate includes a plurality of openings aligned with the plurality of electrical feedthroughs; an electrostatic chuck disposed on the upper assembly and removably coupled to the cooling plate, wherein the electrostatic chuck has a chucking electrode disposed therein that is electrically coupled to a first pair of electrical feedthroughs of the plurality of electrical feedthroughs; and an inner tube coupled to the cooling plate and configured to provide an RF delivery path to the electrostatic chuck.

High temperature detachable very high frequency (VHF) electrostatic chuck (ESC) for PVD chamber

Embodiments of a process kit are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support, the deposition ring including an annular band configured to rest on a lower ledge of the substrate support, the annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, wherein a depth between an upper surface of the annular band and a horizontal portion of the upper surface of the inner lip is between about 6.0 mm and about 12.0 mm; a channel disposed radially outward of and beneath the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

Process kit having tall deposition ring for PVD chamber

Embodiments of substrate supports and process chambers equipped with the same are provided. In some embodiments, a substrate support includes: a support body having a first surface; one or more receptacles extending through the first surface and into the support body; and one or more protrusions respectively disposed within corresponding ones of the one or more receptacles and projecting from the first surface, wherein the one or more protrusions at least partially define a substantially planar support surface above the first surface. Methods of eliminating backside wafer damage are also disclosed.

Substrate support for reduced damage substrate backside

Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

Methods and apparatus for precleaning and treating wafer surfaces

Embodiments of a substrate support are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes a lower assembly having a base plate assembly, wherein the base plate assembly includes a plurality of electrical feedthroughs disposed about a central protrusion; a ceramic puck disposed on the lower assembly and removeably coupled to the base plate assembly, wherein the ceramic puck has an electrode disposed therein that is electrically coupled to first pair of electrical feedthroughs of the plurality of electrical feedthroughs; and a flexible connector having a spiral portion disposed between the ceramic puck and each of the plurality of electrical feedthroughs to allow for differences in thermal expansion of the ceramic puck and the base plate assembly.

Detachable biasable electrostatic chuck for high temperature applications

Base plate for a processing chamber substrate support

Embodiments of lift pin assemblies are provided herein. In some embodiments, a lift pin assembly includes an elongate base formed of a first material and having a first feature formed in a distal end of the base to interface with and removably support a tip; and a tip formed of a second material different than the first material and having a support surface on a first side of the tip and an opposing second side of the tip, wherein the opposing second side includes a second feature to mate with the first feature of the base to removably retain the tip on the distal end of the base.

Lift pin assembly

Methods and apparatus for processing substrates are disclosed herein. In some embodiments, a substrate support to support a substrate in a processing chamber includes a dielectric insulator plate; a conductive plate supported on the dielectric insulator plate, the conductive plate comprising a top surface and a bottom surface defining a thickness between the top surface and the bottom surface, wherein an edge portion of the conductive plate tapers in a radially outward direction; and a dielectric plate comprising a substrate support surface disposed upon the top surface of the conductor plate.

Substrate support for plasma etch operations

Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck for retaining a substrate includes a base plate, a ceramic plate, supported by the base plate, having a substrate supporting surface, a first plurality of electrodes disposed within the ceramic plate having a first polarity, and a second plurality of electrodes disposed within the ceramic plate having a second polarity opposite from the first polarity, wherein the first and second plurality of electrodes are independently controllable to provide a desired chucking power and frequency.

Electrostatic chuck

Shutter disk assemblies for use in process chambers to protect a substrate support disposed below the shutter disk assembly from undesired material deposition are provided herein. In some embodiments, a shutter disk assembly for use in a process chamber to protect a substrate support disposed below the shutter disk assembly may include an upper disk member having a top surface and a bottom surface; and a lower carrier member having at least a portion of the lower carrier member disposed below a portion of the upper disk member to support the upper disk member and to create a protective overlap region that prevents exposure of the substrate support upon deformation of the upper disk member.

Two piece shutter disk assembly for a substrate process chamber

Shutter disks for use in process chambers are provided herein. In some embodiments, a shutter disk for use in a process chamber may include a body having an outer perimeter, a top surface of the body, wherein the top surface includes a central portion having a substantially horizontal planar surface, and at least one angled structure disposed radially outward of the central portion, each of the at least one angled structure having a top portion and an angled surface disposed at a downward angle in a radially outward direction from the top portion toward the outer perimeter, and a bottom surface of the body.

Finned shutter disk for a substrate process chamber

Growing community of inventors

Cupertino, CA, United States of America

Cheng-Hsiung Matthew Tsai