Synopsys, Inc.

Cheng En Wu

Hua Song

James Patrick Shiely

Haiqing Wei

Qiaolin Zhang

Systems and techniques for three-dimension (3D) resist profile aware resolution enhancement techniques are described. 3D resist profile aware resolution enhancement models can be calibrated based on empirical data. Next, the 3D resist profile aware resolution enhancement models can be used in one or more applications, including, but not limited to, lithography verification, etch correction, optical proximity correction, and assist feature placement.

3D resist profile aware resolution enhancement techniques

A computer-implemented method includes modeling, using the computer, a photoresist profile in accordance with a magnitude of a gradient of an inhibitor concentration disposed in the photoresist. The photoresist is used during a process to form an integrated circuit. In one embodiment, the computer-implemented method further includes applying the modeled photoresist profile to reduce a distortion in a printed photoresist pattern caused by a response of the photoresist to an electromagnetic wave and/or particle beam during the process.

Method for modeling a photoresist profile

Systems and techniques for using a three-dimension (3D) resist profile aware etch-bias model are described. A 3D resist profile aware etch-bias model can be calibrated based on empirical data. Next, the 3D resist profile aware etch-bias model can be used in one or more applications, including, but not limited to, lithography verification, etch correction, optical proximity correction, and assist feature placement.

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Hsinchu, Taiwan

Cheng En Wu