United Microelectronics Corp.

Cheng-Chung Chen

Benjamin Szu-Min Lin

George Liu

Vencent Chang

Hui-Ling Huang

There is a grain phenomenon issue of rough sidewall for patterning. Thus, imprecise grain profiles would be observed. As the critical dimensions of integrated circuit microelectronics fabrication device have decreased, the effect of grain phenomenon have become more pronounced. A profile improvement method with a thermal-compressive material and a thermal-compressive process is provided to solve the grain phenomenon issue for baseline of 0.09 um generation and beyond. With this material, the profile can be improved no matter in top view or lateral view. Furthermore, there are 0.1 um IDOF improvement and better physical etching performance.

Profile improvement method for patterning

A photolithographic process that involves building a sandwich photoresist structure. A first photoresist layer is formed over a substrate. An anti-reflection layer is formed over the first photoresist layer. A second photoresist layer is formed over the anti-reflection layer. A first photo-exposure is conducted and the exposed second photoresist layer is developed to pattern the second photoresist layer and the anti-reflection layer. Using the second photoresist layer and the anti-reflection layer as a mask, a second photo-exposure and a second photoresist development are conducted to pattern the first photoresist layer.

Growing community of inventors

Tao-Yuan, Taiwan

Cheng-Chung Chen