Taiwan Semiconductor Manufacturing Comp. Ltd.

Cheng-Chieh Chen

Li-Jui Chen

Hsin-Liang Chen

Wen-Chih Wang

Jeng-Yann Tsay

Heng-Hsin Liu

Shao-Hua Wang

Chueh-Chi Kuo

Pei-Yi Su

Zong-You Yang

Kuei-Lin Ho

Cheng-Wei Sun

Wei-Yuan Chen

Po-Chung Cheng

Hong-Hsing Chou

Yung-yao Lee

Henry Yee-Shian Tong

Louis Chun-Lin Chang

Chia-hung Liao

Hung-ting Lin

Yi-Ming Yeh

Yeh-Chieh Wang

Jhan-Hong Yeh

Chun-Ta Chen

Tsung-Jen Yang

Shyue-Shin Tsai

Henry Yee Shian Tong

Tsung-Yang Liu

An exposure module includes a light source, a photomask situated optically downstream of the light source, and a wafer table situated optically downstream of the photomask. The wafer table includes a plurality of silicon carbide (SiC) crystalline structures separated from each other by trenches. The exposure module further includes a cleaning scrubber operative to clean the wafer table. The cleaning scrubber includes a circular surface and a plurality of microstructures extending from the circular surface. The microstructures are tapered from a first width to a second width in a direction away from the circular surface. The second width is less than a width of the plurality of trenches between the SiC crystalline structures of the wafer table.

Exposure module with cleaning scrubber

A portable handheld cleaning device is provided capable of cleaning the surface of the substrate table without damaging the surface. The portable handheld cleaning device in accordance with the present disclosure includes a base having a first side and a second side (the first side and the second side overlapping each other), a hollow structure on the first side of the base, and a weight holding space within the hollow structure. A grinding pad is provided on the second side of the base. The grinding pad includes a cleaning surface, the cleaning surface having a plurality of substantial pyramid shaped grits.

Surface clean system and method

A lithography system includes a table body, a wafer stage, a first sliding member, a second sliding member, a first cable, a first bracket, a rail guide, and a first protective film. The first sliding member is coupled to the wafer stage. The second sliding member is coupled to an edge of the table body, in which the first sliding member is coupled to a track of the second sliding member. The first bracket fixes the first cable, the first bracket being coupled to a roller structure, in which the roller structure includes a body and a wheel coupled to the body. The rail guide confines a movement of the wheel of the roller structure. The first protective film is adhered to a surface of the rail guide, in which the roller structure is moveable along the first protective film on the surface of the rail guide.

Lithography system and method thereof

A method for forming a layer includes following operations. A workpiece is received in an apparatus for deposition. The apparatus for deposition includes a chamber, a pedestal disposed in the chamber to accommodate the workpiece, and a ring disposed on the pedestal. The ring includes a ring body having a first top surface and a second top surface and a barrier structure disposed between the first top surface and the second top surface. A vertical distance is defined by a top surface of the barrier structure and a top surface of the workpiece. The vertical distance is between approximately 0 mm and approximately 50 mm. A target disposed in the apparatus for deposition is sputtered. A sputtered material is deposited onto a top surface of the workpiece to form a layer. The barrier structure alters an electrical density distribution during the depositing the sputter material.

Method for forming layer

An apparatus for PVD is provided. The apparatus includes a chamber, a pedestal disposed in the chamber to accommodate a wafer, and a ring. The ring includes a ring body having a first top surface and a second top surface, and a barrier structure disposed between the first top surface and the second top surface. The barrier structure can further include at least a first portion and a second portion separated from each other. The second vertical distance is equal to or greater than the first vertical distance.

Apparatus for physical vapor deposition and method for forming a layer

A method includes performing a cleaning operation on a supporting surface of a wafer table by using a cleaning scrubber having a plurality of microstructures, the plurality of microstructures being spaced apart from each other and having a tapered width; placing a semiconductor wafer on the supporting surface of the wafer table; and performing a photolithography process on the semiconductor wafer.

Method of manufacturing semiconductor wafer and cleaning scrubber

A method includes transferring a wafer over a wafer stage on a wafer table. The wafer table includes a table body, a wafer stage, a first sliding member, a second sliding member, a first cable, a first bracket and a second bracket, and a stopper. The second sliding member is movable along a first direction, in which the first sliding member is coupled to a track of the second sliding member, the first sliding member being movable along a second direction vertical to the first direction. The first bracket and the second bracket are connected by a leaf spring. The method includes moving the wafer stage toward the edge of the table body, such that the wafer stage pushes the first cable outwardly, such that the leaf spring is moved toward a first protective film on a surface of the stopper facing the leaf spring.

In a method of diagnosing an RF generator of a laser produced plasma extreme ultra violet (LPP EUV) radiation source apparatus, a testing system is connected to the RF generator of the LPP EUV radiation source apparatus. An output power is measured by the testing system with changing an input power of the RF generator. Using a computer system, the measured output power is analyzed. Based on the analyzed measured output power, whether the RF generator is operating properly is determined.

EUV light source and apparatus for lithography

A device includes a laser source, an amplifier, an optical sensor and a spectrometer. The laser source is configured to produce a seed laser beam. The amplifier includes gain medium and a discharging unit. The discharging unit is configured to pump the gain medium for amplifying power of the seed laser beam. The optical sensor is coupled to the amplifier and configured for sensing an optical emission generated in the amplifier while the gain medium is discharging. The spectrometer is coupled with the optical sensor and configured to measure a spectrum of the optical emission.

Laser source device, extreme ultraviolet lithography device and method

Laser source device and extreme ultraviolet lithography device

Embodiments of method for cooling a wafer are provided. A method for cooling a wafer includes placing the wafer in a processing module via a passage of a seat member. The method also includes moving a closure member toward the seat member in a diagonal manner. The method further includes engaging the seat member and the closure member and placing a portion of the closure member inside the passage. In addition, the method includes performing a process on the wafer in the processing module.

Method for sealing processing module

A system for semiconductor manufacturing that uses ultrasonic waves for estimating and monitoring a remaining service lifetime of a consumable element is provided. A consumable element comprises a front side arranged inside a process chamber and a back side, opposite the front side, arranged outside the process chamber. An ultrasonic transducer is arranged on the back side of the consumable element, and directed towards the front side of the consumable element. A monitoring unit is configured to estimate and monitor a remaining service lifetime of the consumable element using the ultrasonic transducer. A method for estimating and monitoring the remaining service lifetime of the consumable element using ultrasonic waves is also provided.

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Tainan, Taiwan

Cheng-Chieh Chen