Applied Materials, Inc.

Cheng Cheng

Sang Jin Lee

Kai Wu

Peiqi Wang

Insu Ha

A method of forming a structure of a substrate is provided including a tungsten-containing layer including a nucleation layer and a fill layer. The method includes disposing a nucleation layer along sidewalls of the opening, wherein nucleation layer includes boron and tungsten. Disposing the fill layer over the nucleation layer within the opening, wherein a tungsten-containing layer includes a resistivity of about 16 μΩ·cm or less, wherein a tungsten-containing layer has a thickness of about 200 Å to about 600 Å, and wherein a tungsten-containing layer thickness is half a width of the tungsten-containing layer disposed within the opening between opposing sidewall portions of the opening.

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San Jose, CA, United States of America

Cheng Cheng