Globalfoundries Singapore Pte. Ltd.

Cheng-Cheh Tan

Alex See

Liang Choo Hsia

Fan Zhang

Tae Jong Lee

Xiaomei Bu

Kho Liep Chok

Example embodiments of a structure and method for forming a copper interconnect having a doped region near a top surface. The doped region has implanted alloying elements that block grain boundaries and reduce stress and electro migration. In a first example embodiment, the barrier layer is left over the inter metal dielectric layer during the alloying element implant. The barrier layer is later removed with a planarization process. In a second example embodiment the barrier layer is removed before the alloying element implant and a hard mask blocks the alloying element from being implanted in the inter metal dielectric layer.

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Singapore, Singapore

Cheng-Cheh Tan