Rohm & Haas Electronic Materials LLC

Dow Global Technolgoies LLC

Rohm and Haas Electronic Materials Korea Ltd.

Other

Rohm and Haas Electronics Materials LLC

Cheng-Bai Xu

Cong Liu

Mingqi Li

Deyan Wang

Emad Aqad

George G Barclay

Chunyi Wu

Shintaro Yamada

Irvinder Kaur

Gerhard Pohlers

Doris H Kang

Jong Keun Park

Gregory P Prokopowicz

Kevin Rowell

Phillip Dene Hustad

William Williams, Iii

Joseph Mattia

Choong-Bong Lee

Cecily Andes

Jae Hwan Sim

Stefan J Caporale

Jae-Bong Lim

Xisen Hou

Jung Kyu Jo

Dong Won Chung

Yoshihiro Yamamoto

Jason A DeSisto

Cheng Han Wu

Sabrina Wong

Joon Seok Oh

Peter Trefonas, Iii

James W Thackeray

Anthony Zampini

Jin Hong Park

Clark H Cummins

Charles R Szmanda

Matthias Stefan Ober

Seung-Hyun Lee

Jibin Sun

Gary N Taylor

Chang-Young Hong

James C Taylor

Thomas A Estelle

Jung Woo Kim

Jinrong Liu

Ching-Lung Chen

Wenyan Yin

Joon-Seok Oh

Bon-ki Ku

Gerhard Polhers

Yasuhiro Suzuki

Colin Liu

Lori Anne Joesten

Methods of forming an electronic device, comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer. The methods have particular applicability in the semiconductor manufacturing industry.

Pattern formation methods

Topcoat compositions are provided that can be used in immersion lithography to form photoresist patterns. The topcoat compositions include a solvent system that comprises 1) a first organic solvent represented by formula (I),

Topcoat compositions and photolithographic methods

Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the aromatic sulfonic acid is of general formula (I): wherein: Arrepresents an aromatic group; Rindependently represents a halogen atom, hydroxy, substituted or unsubstituted alkyl, substituted or unsubstituted heteroalkyl, substituted or unsubstituted carbocyclic aryl, substituted or unsubstituted heterocyclic aryl, substituted or unsubstituted alkoxy, or a combination thereof, wherein adjacent Rgroups together optionally form a fused ring structure with Ar; a represents an integer of 2 or more; and b represents an integer of 1 or more, provided that a+b is at least 3 and is not greater than the total number of available aromatic carbon atoms of Ar, and two or more of Rare independently a fluorine atom or a fluoroalkyl group bonded directly to an aromatic ring carbon atom.

Photoresist pattern trimming compositions and pattern formation methods

Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): wherein: X independently represents a halogen atom; Q represents a single bond, &#x2014;O&#x2014;, or &#x2014;C(O)O&#x2014;; Rindependently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; Rrepresents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Compositions comprising base-reactive component and processes for photolithography

New photoacid generator compounds ('PAGs') are provided that comprise a cholate moiety and photoresist compositions that comprise such PAG compounds.

Cholate photoacid generators and photoresists comprising same

New photoresist compositions are provided that comprise a component that comprises an amide group and multiple hydroxyl groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and an amide component with multiple hydroxyl groups that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer.

Photoresists comprising amide component

New polymers are provided comprising (i) one or more covalently linked photoacid generator moieties and (ii) one or more photoacid-labile groups, wherein the one or more photoacid generator moieties are a component of one or more of the photoacid-labile groups. Preferred polymers of the invention are suitable for use in photoresists imaged at short wavelengths such as sub-200 nm, particularly 193 nm.

Polymers and photoresist compositions

Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: Rindependently represents H, F or optionally fluorinated C1 to C4 alkyl; Rrepresents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; Lrepresents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: Rindependently represents H, F or optionally fluorinated C1 to C4 alkyl; Rrepresents linear, branched or cyclic C1 to C20 alkyl; Rrepresents linear, branched or cyclic C1 to C20 fluoroalkyl; Lrepresents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.

Photoresist topcoat compositions and methods of processing photoresist compositions

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Compositions comprising sulfonamide material and processes for photolithography

New photoresist compositions are provided that comprise a carbamate compound that comprises 1) a carbamate group and 2) an ester group. Preferred photoresists of the invention may comprise a resin with acid-labile groups; an acid generator compound; and a carbamate compound that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer.

Photoresists comprising carbamate component

New photoresist compositions are provided that comprise a component that comprises a radiation-insensitive ionic compound. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and a radiation-insensitive ionic compound that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer.

Photoresists comprising ionic compound

New bis(sulfonyl)imide and tri(sulfonyl)methide photoacid generator compounds ('PAGs') are provided as well as photoresist compositions that comprise such PAG compounds.

Sulfonyl photoacid generators and photoresists comprising same

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises one or more materials that have hetero-substituted carbocyclic aryl groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography

Acid generator compounds are provided that are particularly useful as a photoresist composition component. In one preferred aspect, acid generators are provided that comprise one or more hydrophilic moieties.

Acid generator compounds and photoresists comprising same

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Southborough, MA, United States of America

Cheng-Bai Xu