Promos Technologies, Inc

Cheng-An Peng

Jiun-Fang Wang

Guan-Jiun Yi

A method of improving uniformity control in chemical mechanical polishing (CMP). A CMP apparatus is provided with at least a platen, a polishing pad disposed on the platen and at least a polishing carrier installed over the platen. The platen rotates in a first rotating direction, and the polishing carrier is used to press a wafer on the polishing pad and drive the wafer to rotate. First, in a first-CMP step, the polishing carrier rotates in a second rotating direction. Then, in a second-CMP step, the polishing carrier rotates in a third rotating direction different from the second rotating direction.

Method of improving uniformity control on wafers during chemical mechanical polishing

A fixed abrasive chemical polishing method uses an aqueous solution that has a variable pH. During polishing the pH of the aqueous solution is changed so that the polishing process can be more precisely controlled. The removal rate and removal selectivity between oxide and nitride can be controlled by varying the pH of the aqueous solution.

Chemical mechanical polishing method for slurry free fixed abrasive pads

A plug for plugging selected perforations in a carrier assembly used in a chemical mechanical polishing system for polishing semiconductor wafers is disclosed. The plug comprises a pressure-resistant portion; a bottom portion attached to the pressure-resistant portion; and a leak-resistant portion extending from the pressure-resistant portion, dimensioned to fit snugly into the bottom portion.

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Pingtung, Taiwan

Cheng-An Peng