Applied Materials, Inc.

Chenfei Shen

Chi-Chou Lin

Srinivas Gandikota

He Ren

Mandyam Sriram

Naomi Yoshida

Shih Chung Chen

Ilanit Fisher

Kedi Wu

Mehul B Naik

Hao Chen

Wen Xiao Chen

Xuesong Lu

Hao Jiang

Methods of forming electronic devices comprising tungsten film stacks are provided. Methods include forming a tungsten nucleation layer on the barrier layer using an atomic layer deposition (ALD) process including a tungsten precursor that is free of fluorine. Forming the nucleation layer comprises controlling process parameters and/or forming WSi pre-nucleation layer.

Method of reducing titanium nitride etching during tungsten film formation

Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.

Fluorine-free tungsten ALD for dielectric selectivity improvement

Embodiments of the present disclosure generally relate to methods of cleaning a structure and methods of depositing a capping layer in a structure. The method of cleaning a structure includes suppling a cleaning gas, including a first gas including nitrogen (N) and a second gas including fluorine (F), to a bottom surface of a structure. The cleaning gas removes unwanted metal oxide and etch residue from the bottom surface of the structure. The method of depositing a capping layer includes depositing the capping layer over the bottom surface of the structure. The methods described herein reduce the amount of unwanted metal oxides and residue, which improves adhesion of deposited capping layers.

Method of cleaning a structure and method of depositing a capping layer in a structure

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San Jose, CA, United States of America

Chenfei Shen