Epistar Corporation

Chipbond Technology Corporation

Ganrich Semiconductor Corporation

Chen-Yu Wang

Sheng-Bo Wang

Yao-Zhong Liu

Chiao Fu

Jai-Tai Kuo

Jia-Tay Kuo

Chao-Kai Chang

Chih-Ming Kuo

Lung-Hua Ho

Chang-Hseih Wu

Chang-Hsieh Wu

Huan-Kuen Chen

Pai-Sheng Cheng

Yi-Ru Shen

Shrane-Ning Jenq

Wen-Cheng Hsu

Chwan-Tyaw Chen

A package structure is provided herein, which includes a substrate, an integrated transistor, and an encapsulation structure. The integrated transistor is disposed on the substrate and includes a transistor, a capacitor, a resistor, a first Zener diode, and a second Zener diode. The transistor includes a gate, a drain, and a source. The capacitor is electrically connected to the gate, and the resistor is electrically connected to the gate. The first Zener diode includes a first anode and a first cathode electrically connected to the gate. The second Zener diode includes a second anode electrically connected to the first anode and a second cathode electrically connected to the source. The encapsulation structure encapsulates the integrated transistor. The package structure includes a gate terminal, a drain terminal, and a source terminal.

Package structure

In a method of manufacturing an electronic package, first grooves are formed on a circuit structure and a second groove is formed in each of the first grooves to allow the circuit structure to become circuit layers. Owing to the second groove is narrower than the first groove, each of the circuit layers has an encircled surface and a notch located on the encircled surface. When a shielding layer is provided to cover an encapsulating body located on the circuit layer, a space of the notch is not covered by the shielding layer such that a portion to be removed of the shielding layer will not remain on the electronic package to become burr after removing the portion to be removed.

Electronic package and method of manufacturing the same

A package including a first carrier, a seed layer, wires, a die and a molding material is provided. The first carrier is removed to expose the seed layer after disposing a second carrier on the molding material, then the seed layer is removed to expose the wires, and a gold layer is deposited on each of the wires by immersion gold plating, finally a semiconductor device is obtained. The gold layer is provided to protect the wires from oxidation and improve solder joint reliability.

Method of manufacturing semiconductor device

Package structure for a semiconductor element

A voltage converter circuit, comprising: a bridge rectifier; a first transistor, having a first end, a second end and a third end; a second transistor, having a first end and a second end; wherein the first end of the first transistor and the first end of second transistor are electrically connected to bridge rectifier, and the second end of the first transistor is electrically connected to the first end of the second transistor; and a Zener diode, connected between the third end of the first transistor and the second end of the second transistor.

Voltage converter circuit for converting AC voltage to DC voltage

A light-emitting device has a stabilizing-current circuit, a current source having a high electron mobility transistor, and a light source electrically connected to the stabilizing-current circuit and the current source.

Light-emitting device

Growing community of inventors

Hsinchu, Taiwan

Chen-Yu Wang