Lam Research Corporation

California Institute of Technology

Lam Research Corportation

Chen Xu

Yoshie Kimura

Xiang Zhou

Duming Zhang

Ganesh Upadhyaya

Mitchell Brooks

Radhika C Mani

Sarah Reisman

Naveed Ansari

Kangway V Chuang

Si-Yi Yi Li

Kazi Sultana

Haseeb Kazi

Robert H Grubbs

Alex Paterson

John Stephen Drewery

Brian M Stoltz

Tom A Kamp

Tonia S Ahmed

Jiaming Li

Methods and apparatuses for critical dimension (CD) control of substrate features using integrated atomic layer deposition (ALD) and etch processes are described herein. Methods include etching to form a mask pattern of features on a substrate having a width that is less than a desired width of structures to be subsequently formed by the mask pattern of features, conformally depositing a passivation layer by ALD that increases the width of the mask pattern of features to the desired width, and etching a layer of the substrate to a desired depth to form the plurality of structures having the desired width.

Atomic layer deposition and etch in a single plasma chamber for critical dimension control

Methods and apparatuses for reducing roughness using integrated atomic layer deposition (ALD) and etch processes are described herein. In some implementations, after a mask is provided on a substrate, methods include depositing a conformal layer on the mask by ALD to reduce roughness and etching a layer underlying the mask to form patterned features having a reduced roughness. In some implementations, after a substrate is etched to a first depth to form features at the first depth in the substrate, methods include depositing a conformal layer by ALD on sidewalls of the features to protect sidewalls and reduce roughness during a subsequent etch process. The ALD and etch processes may be performed in a plasma chamber.

Atomic layer deposition and etch for reducing roughness

The present disclosure is directed to methods of preparing prostaglandin J natural products by stereoretentive metatheses reactions and intermediates used in the synthesis of these natural products, including the use of intermediates of Formula (I-A), where Ris defined in the specification 

Total synthesis of prostaglandin J natural products and their intermediates

A method for etching a substrate includes performing, in a plasma chamber, a first etch of a substrate material using a plasma etch process. The first etch forms features to a first depth in the material. Following the first etch, the method includes performing, in the plasma chamber without removing the substrate from the chamber, an atomic layer passivation (ALP) process to deposit a conformal film of passivation over the mask and the features formed during the first etch. The ALP process uses a vapor from a liquid precursor to form passivation over the features and the mask. The method further includes performing, in the plasma chamber, a second etch of the material using the plasma etch process. The conformal film of passivation is configured to protect the mask and sidewalls of the features during the second etch. A plasma processing system also is described.

Integrated atomic layer passivation in TCP etch chamber and in-situ etch-ALP method

This disclosure is related to methods for producing anhydroryanodol, ryanodol, or analogs thereof and novel compounds prepared thereby.

Synthetic route to anhydroryanodol, ryanodol and structural analogues

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Pasadena, CA, United States of America

Chen Xu