Hitachi High-tech Corporation

Chen Pin Hsu

Hitoshi Tamura

Satoshi Yamamoto

Masakazu Isozaki

Masatsugu Fujita

A vacuum processing apparatus including a vacuum processing unit embracing a vacuum vessel into which a wafer to be processed is transferred and processed; a lock chamber into which the wafer is transferred; an atmospheric transfer unit embracing an atmospheric transfer chamber maintained at atmospheric pressure and inside which the wafer is transferred; and a wafer preserving container for stacking a processed wafer. The wafer preserving container is provided inside with an exhaust port which is placed behind the opening, in front of the stacking space, and in an upper and a lower edge regions relative to the stacking space and exhausts gas in the stacking space to outside and a manifold which is placed behind the stacking space, towards the opening between the upper edge region and the lower edge region, and has gas outlets to supply certain gas into the stacking space.

Vacuum processing apparatus

In order to enable plasma density distribution control having a high degree of freedom to solve problems of not only in-plane uniformity of an etching processing but also a reduction of a charge-up damage, a plasma processing apparatus includes: a vacuum chamber provided with a plasma processing chamber that plasma-processes a substrate inside and is able to exhaust the inside of this plasma processing chamber to a vacuum; and a microwave power supply unit that is provided with a microwave source and a circular waveguide and supplies, via the circular waveguide, a microwave power oscillated from the microwave source to the vacuum chamber, in which the microwave power supply unit is configured by arranging a plurality of waveguides, which are coaxially and concentrically arranged with the circular waveguide and have different dielectric constants inside, between the circular waveguide and the vacuum chamber.

Plasma processing apparatus

A plasma processing apparatus adapted to reduce non-uniformity of plasma distribution in a process chamber and to adjust the plasma distribution to 'centrally high density', “circumferentially high density”, or “uniform density” in accordance with a desired etching process, a process chamber; a radio frequency power source; a rectangular waveguide; and a circular waveguide connected to the rectangular waveguide, in which the rectangular waveguide includes an upper rectangular waveguide and a lower rectangular waveguide formed by vertically dividing the rectangular waveguide; and a cutoff section which cuts off the microwave frequency power and which has a dielectric body. The circular waveguide includes an inner waveguide connected to the upper rectangular waveguide and formed inside; and an outer waveguide connected to the lower rectangular waveguide and formed on an outer side of the inner waveguide. The cutoff section has a width narrower than those of the rectangular waveguides except the cutoff section.

Growing community of inventors

Tokyo, Japan

Chen Pin Hsu