Taiwan Semiconductor Manufacturing Comp. Ltd.

Chen-han Wang

Keng-Chu Lin

Yu-Yun Peng

Shuen-Shin Liang

Fu-Ting Yen

Ting-Ting Chen

Tetsuji Ueno

Khaderbad Mrunal Abhijith

Tsu-hsiu Perng

The present disclosure relates to a semiconductor device including first and second terminals formed on a fin region and a seal layer formed between the first and second terminals. The seal layer includes a silicon carbide material doped with oxygen. The semiconductor device also includes an air gap surrounded by the seal layer, the fin region, and the first and second terminals.

Seal material for air gaps in semiconductor devices

The present disclosure provides an interconnect structure and a method for forming an interconnect structure. The method for forming an interconnect structure includes forming a first interlayer dielectric (ILD) layer over a substrate, forming a contact in the first ILD layer, forming a second ILD layer over the first ILD layer, forming a first opening in the second ILD layer and obtaining an exposed side surface of the second ILD layer over the contact, forming a densified dielectric layer at the exposed side surface of the second ILD layer, including oxidizing the exposed side surface of the second ILD layer by irradiating a microwave on the second ILD layer, and forming a via in contact with the densified dielectric layer.

Interconnect structure and method for manufacturing the interconnect structure

Growing community of inventors

HSINCHU COUNTY, Taiwan

Chen-han Wang