Cmc Materials, Inc.

Cabot Microelectronics Corporation

Chen-Chih Tsai

Ping Huang

Eric S Moyer

Lin Fu

Paul Andre Lefevre

Sarah Brosnan

Justin Stewart

Jaeseok Lee

Rui Ma

Nathan Speer

Kathryn Bergman

Carlos Barros

William Michael Spitzig

Aaron Peterson

Dustin Miller

A subpad for a chemical-mechanical polishing pad, the subpad having porogens with polymeric shells. Methods of fabricating the subpad and polishing pads with a polishing surface layer bonded to the subpad layer are also described.

Chemical-mechanical polishing subpad having porogens with polymeric shells

A chemical mechanical polishing (CMP) pad includes a polishing portion formed using a vat-based additive manufacturing process. The polishing portion includes a polymer material with a first elastic modulus. In some embodiments the polishing portion is disposed on the backing portion. The backing portion may have a second elastic modulus. The second elastic modulus may be less than the first elastic modulus.

Chemical mechanical planarization pads via vat-based production

A chemical-mechanical polishing pad comprising a thermosetting polyurethane polishing layer includes an isocyanate-terminated urethane prepolymer, a polyamine curative, and a cyclohexanedimethanol curative. The polyamine curative and the cyclohexanedimethanol curative are in a molar ratio of polyamine curative to cyclohexanedimethanol curative in a range from about 20:1 to about 1:1.

Polishing pad employing polyamine and cyclohexanedimethanol curatives

The invention provides a UV-curable resin for forming a chemical-mechanical polishing pad comprising: (a) one or more acrylate blocked isocyanates; (b) one or more acrylate monomers; and (c) a photoinitiator. The invention also provides a method of forming a chemical-mechanical polishing pad using the UV-curable resin.

UV-curable resins used for chemical mechanical polishing pads

A chemical-mechanical polishing pad comprising a polyurethane polishing layer having a high storage modulus at low temperatures and a low storage modulus at high temperatures is disclosed. For example, the disclosed pad embodiments may be fabricated from a thermoplastic polyurethane having a ratio of storage modulus at 25 degrees C. to storage modulus at 80 degrees C. of 50 or more. The thermoplastic polyurethane polishing layer may further optionally have a Shore D hardness of 70 or more, a tensile elongation of 320 percent or less, a storage modulus at 25 degrees C. of 1200 MPa or more, and/or a storage modulus at 80 degrees C. of 15 MPa or less.

Polyurethane CMP pads having a high modulus ratio

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Naperville, IL, United States of America

Chen-Chih Tsai