Infineon Technologies Ag

Infineon Technologies Austria Ag

Chee Yang Ng

Kok Yau Chua

Swee Kah Lee

Chau Fatt Chiang

Stefan Woetzel

Josef Maerz

Valentyn Solomko

Sook Woon Chan

Chee Hong Lee

Ralf Otremba

Horst Theuss

Edward Fuergut

Gerald Deboy

Petteri Palm

Klaus Schiess

Mark Pavier

Christian Geissler

Angela Kessler

Kennith Kin Leong

Bernd Goller

Dominic Maier

Thomas Kilger

Chii Shang Hong

Stefan Macheiner

Luca Peluso

Wae Chet Yong

Theng Chao Long

Johannes Lodermeyer

Matthias Steiert

Thai Kee Gan

Sergey Yuferev

Claus Waechter

Jayaganasan Narayanasamy

Beng Keh See

Stuart Cardwell

Franz-Xaver Muehlbauer

Nurfarena Othman

Guan Choon Matthew Nelson Tee

Clive O'Dell

Hock Siang Chua

Joseph Victor Soosai Prakasam

Hong Hock Tay

Paul Armand Asentista Calo

Milad Mostofizadeh

Edward Andrew Jones

A method of producing a semiconductor package includes providing a substrate formed of electrically insulating material and including a die mounting surface, and a first semiconductor die embedded within the substrate, the first semiconductor die including a first conductive terminal that faces the die mounting surface, providing a second semiconductor die that includes a first conductive terminal, and mounting the second semiconductor die on the die mounting surface such that the first conductive terminal of the second semiconductor die faces and is spaced apart from the die mounting surface, a first electrical connection that directly connects the first conductive terminals of the first and second semiconductor dies together is formed, and the second semiconductor die partially overlaps with the first semiconductor die.

Hybrid embedded package

A method of manufacturing an electronic module assembly includes forming the electronic module assembly, wherein the electronic module assembly comprises a plurality of internal exposed surfaces, a plurality of external exposed surfaces, at least one internal cavity, and an internal heat source configured to generate heat internally within the electronic module assembly; dipping the electronic module assembly into a thermally conductive material to coat the plurality of internal exposed surfaces and the plurality of external exposed surfaces and to at least partially fill the at least one internal cavity; and curing the thermally conductive material formed on the plurality of internal exposed surfaces and the plurality of external exposed surfaces and filled within the at least one internal cavity to form a thermally conductive layer, wherein the thermally conductive layer is formed as a one-piece integral member.

Dipped coated electronic module assembly with enhanced thermal distribution

A voltage regulator module includes: power input and output terminals at a same side of the voltage regulator module; a first power stage configured to receive an input voltage from the power input terminal and output a phase current at a switch node of the first power stage, the first power stage including an inductor having a vertical conductor embedded in a magnetic core, the vertical conductor having a first end which is electrically connected to the switch node and a second end opposite the first end; and a first metal clip which electrically connects the second end of the vertical conductor to the power output terminal such that power is delivered to and from the voltage regulator module at the same side of the voltage regulator module. A method of producing the voltage regulator module and electronic assembly that includes the voltage regulator module are also described.

Voltage regulator module with inductor-cooled power stage

A method of forming a chip package is provided. The method may include: arranging an elastic thermal interface material over a semiconductor chip, wherein the elastic thermal interface material may be configured to transfer heat from the chip to an outside; arranging a mold around the thermal interface material and at least partially around the semiconductor chip, thereby compressing the elastic thermal interface material with the mold; and filling the mold with a packaging material.

Method of forming a chip package, method of forming a semiconductor arrangement, chip package, and semiconductor arrangement

A package and method of manufacturing a package is disclosed. In one example, a package which comprises a first transistor chip having a first source pad and a second transistor chip having a second source pad and being stacked with the first transistor chip at an interface area. The first source pad and the second source pad are coupled at the interface area.

Stacked transistor chip package with source coupling

A semiconductor package includes: a carrier having an electrically insulative body and a first contact structure at a first side of the electrically insulative body; and a semiconductor die having a first pad attached to the first contact structure of the carrier, the first pad being at source or emitter potential. The first pad is spaced inward from an edge of the semiconductor die by a first distance. The semiconductor die has an edge termination region between the edge and the first pad. The first contact structure of the carrier is spaced inward from the edge of the semiconductor die by a second distance greater than the first distance such that an electric field that emanates from the edge termination region in a direction of the carrier during normal operation of the semiconductor die does not reach the first contact structure of the carrier. Methods of production are also provided.

Semiconductor package having a chip carrier with a pad offset feature

A semiconductor package includes: a carrier having a first side and a second side opposite the first side, the first side having a plurality of contact structures; a semiconductor die having a first side and a second side opposite the first side, the first side of the semiconductor die having a plurality of pads attached to the plurality of contact structures at the first side of the carrier; a metal plate attached to the second side of the semiconductor die, the metal plate having a size that is independent of the size of the carrier and based on an expected thermal load to be presented by the semiconductor die; and an encapsulant confined by the carrier and the metal plate and laterally surrounding an edge of the semiconductor die. Corresponding methods of production are also provided.

Semiconductor package having a chip carrier and a metal plate sized independently of the chip carrier

A semiconductor package includes a substrate formed of electrically insulating material and having a die mounting surface, a first semiconductor die embedded within the substrate and comprising a first conductive terminal that faces the die mounting surface, a second semiconductor die mounted on the die mounting surface and comprising a first conductive terminal that faces and is spaced apart from the die mounting surface, and a first electrical connection that directly connects the first conductive terminals of the first and second semiconductor dies together, wherein the second semiconductor die partially overlaps with the first semiconductor die.

A semiconductor device includes a conductive frame comprising a die attach surface that is substantially planar, a semiconductor die comprising a first load on a rear surface and a second terminal disposed on a main surface, a first conductive contact structure disposed on the die attach surface, and a second conductive contact structure on the main surface. The first conductive contact structure vertically extends past a plane of the main surface of the semiconductor die. The first conductive contact structure is electrically isolated from the main surface of the semiconductor die by an electrical isolation structure. An upper surface of the electrical isolation structure is below the main surface of the semiconductor die.

Semiconductor assembly with conductive frame for I/O standoff and thermal dissipation

Embodiments of molded packages and corresponding methods of manufacture are provided. In an embodiment of a molded package, the molded package includes a laser-activatable mold compound having a plurality of laser-activated regions which are plated with an electrically conductive material to form metal pads and/or metal traces at a first side of the laser-activatable mold compound. A semiconductor die embedded in the laser-activatable mold compound has a plurality of die pads. An interconnect electrically connects the plurality of die pads of the semiconductor die to the metal pads and/or metal traces at the first side of the laser-activatable mold compound.

Semiconductor package having a laser-activatable mold compound

An embodiment device includes a body structure having an interior cavity, a control chip disposed on a first interior surface of the interior cavity, and a sensor attached, at a first side, to a second interior surface of the interior cavity opposite the first interior surface. The sensor has a mounting pad on a second side of the sensor that faces the first interior surface, and the sensor is vertically spaced apart from the control chip by an air gap, with the sensor is aligned at least partially over the control chip. The device further includes an interconnect having a first end mounted on the mounting pad, the interconnect extending through the interior cavity toward the first interior surface, and the control chip is in electrical communication with the sensor by way of the interconnect.

Over-under sensor packaging with sensor spaced apart from control chip

In accordance with an embodiment a package includes: a package structure which defines inner surfaces delimiting an inner volume and outer surfaces directed towards an exterior of the package; at least one acoustic sensor element applied to at least one of the inner surfaces, to convert acoustic waves arriving from the exterior of the package into acoustic information in the form of electric signals; a plurality of millimeter wave sensing elements applied to at least one of the outer surfaces, to receive reflected radar signals from objects in the exterior of the package; and a circuitry applied to at least one of the inner surfaces of the package structure, wherein the circuitry is electrically connected to the at least one acoustic sensor element and the plurality of millimeter wave sensing elements to process the acoustic information and the reflected radar signals.

Package with acoustic sensing device(s) and millimeter wave sensing elements

A semiconductor package includes a frame having an insulative body with a first main surface and a second main surface opposite the first main surface, a first plurality of metal traces at the first main surface, and a first cavity in the insulative body. A thermally and/or electrically conductive material filling the first cavity in the insulative body and having a different composition than the first plurality of metal traces. The thermally and/or electrically conductive material provides a thermally and/or electrically conductive path between the first and the second main surfaces of the insulative body. A semiconductor die attached to the frame at the first main surface of the insulative body is electrically connected to the first plurality of metal traces and to the thermally and/or electrically conductive material filling the first cavity in the insulative body. A corresponding method of manufacture is also described.

Semiconductor package having a filled conductive cavity

A semiconductor package includes a semiconductor die having a sensor structure disposed at a first side of the semiconductor die, and a first port extending through the semiconductor die from the first side to a second side of the semiconductor die opposite the first side, so as to provide a link to the outside environment. Corresponding methods of manufacture are also provided.

Semiconductor package with a through port for sensor applications

Growing community of inventors

Johor, Malaysia

Chee Yang Ng