Xilinx, Inc.

Cheang-Whang Chang

Henley Liu

Myongseob Kim

Nui Chong

Jaspreet Singh Gandhi

Gamal Refai-Ahmed

Suresh Ramalingam

Ping-Chin Yeh

Amitava Majumdar

Boon Yong Ang

Suresh Parameswaran

Tien-Yu Lee

Yuqing Gong

Arifur Rahman

Mohsen Hossein Mardi

John K Jennings

Ivor G Barber

Daniel Y Chung

Jae-Gyung Ahn

Dong P Kim

Sanjiv Stokes

Albert Shih-Huai Lin

Hui-Wen Lin

Rhesa Nathanael

Da Cheng

Suresh P Parameswaran

Circuits and methods involve an integrated circuit (IC) device, a plurality of application-specific sub-circuits, and a plurality of instances of a measuring circuit. The application-specific sub-circuits are disposed within respective areas of the IC device. Each instance of the measuring circuit is associated with one of the application-specific sub-circuits and is disposed within a respective one of the areas of the device. Each instance of the measuring circuit further includes a ring oscillator and a register for storage of a value indicative of an interval of time. Each instance of the measuring circuit is configured to measure passage of the interval of time based on a first clock signal, count oscillations of an output signal of the ring oscillator during the interval of time, and output a value indicating a number of oscillations counted during the interval of time.

Runtime measurement of process variations and supply voltage characteristics

A chip package assembly and method for fabricating the same are provided which utilize a plurality of electrically floating extra-die heat transfer posts for improved thermal management. In one example, a chip package assembly is provided that includes a substrate, a first integrated circuit (IC) die, and a first plurality of electrically floating extra-die conductive posts. The substrate has a first surface and an opposing second surface. The first integrated circuit (IC) die has a first surface and an opposing second surface. The second surface of the first IC die is mounted to the first surface of the substrate. The first plurality of electrically floating extra-die conductive posts extend from the first surface of the first IC die to provide a heat transfer path away from the first IC die.

Stacked silicon package assembly having vertical thermal management

A chip package assembly and method for fabricating the same are provided which utilize a plurality of extra-die heat transfer posts for improved thermal management. In one example, a chip package assembly is provided that includes a first integrated circuit (IC) die mounted to a substrate, a cover disposed over the first IC die, and a plurality of extra-die conductive posts disposed between the cover and substrate. The extra-die conductive posts provide a heat transfer path between the cover and substrate that is laterally outward of the first IC die.

Stacked silicon package assembly having thermal management

A chip package assembly and method for fabricating the same are provided which utilize a plurality of electrically floating heat transfer structures for improved thermal management. In one example, a chip package assembly is provided. The chip package assembly includes a substrate, a first integrated circuit (IC) die and a plurality of electrically floating conductive heat transfer structures. The substrate has a first surface and an opposing second surface. The first IC die has a first surface, an opposing second surface, and four lateral sides. The second surface of the first IC die is mounted to the first surface of the substrate. The plurality of electrically floating conductive heat transfer structures extend in a first direction defined between the first and second surfaces of the first IC die. A first conductive heat transfer structure of the plurality of electrically floating conductive heat transfer structures are part of a first conductive heat transfer path having a length in the first direction at least as long as a distance between the first and second surfaces.

Integrated circuit (IC) dies and method for manufacturing the same are described herein that mitigate pattern loading effects during manufacture. In one example, the IC includes a die body having a first circuit block separated from an adjacent second circuit block by a buffer zone. The first and second circuit blocks have first and second transistors that are at least partially fabricated from a gate metal layer and disposed immediately adjacent the buffer zone. A dummy structure is formed in the buffer zone and is also at least partially fabricated from the gate metal layer. An amount of gate metal layer material in the dummy structure is selected to mitigate differences in the amount of gate metal layer material in regions of first and second circuit blocks that neighbor each other across the buffer zone.

IC die with dummy structures

Device(s) and method(s) related generally to a wafer or die stack are disclosed. In one such device, a die stack of two or more integrated circuit dies has associated therewith test circuits corresponding to each level of the die stack each with a set of pads. A test data-input path includes being from: a test data-in pad through a test circuit to a test data-out pad of each of the test circuits; and the test data-out pad to the test data-in pad between consecutive levels of the test circuits. Each of the set of pads includes the test data-in pad and the test data-out pad respectively thereof. A test data-output path is coupled to the test data-out pad of a level of the levels.

Test circuits for testing a die stack

An electronic device and method for fabricating the same are disclosed herein. In one example the electronic device includes a substrate, a first die stack, and a second die stack. The first die stack includes a first functional die and a first dummy die. The first functional die is mounted to the substrate. The second stack includes a plurality of serially stacked second functional dies mounted to the substrate. The first dummy die is stacked on the first functional die. The first dummy die has a top surface that is substantially coplanar with a top surface of the second die stack. In one particular example, the first die stack includes a logic die and the second die stack includes a plurality of serially stacked memory dies.

Package integration for memory devices

A chip package assembly and method for fabricating the same are provided which utilize at least one modular core dice to reduce the cost of manufacture. The modular core dice include at least two die disposed on a wafer segment that are separated by a scribe lane. In one example, a chip package assembly is provided that includes an interconnect substrate stacked below a first wafer segment. The first wafer segment has a first die spaced from a second die by a first scribe lane. The interconnect substrate has conductive routing that is electrically connected to the first die and the second die through die connections.

Chip package assembly with modular core dice

A stacked wafer assembly and method for fabricating the same are described herein. In one example, a stacked wafer assembly includes a first wafer bonded to a second wafer. The first wafer includes a plurality of fully functional dies and a first partial die formed thereon. The second wafer includes a plurality of fully functional dies and a first partial die formed thereon. Bond pads formed over an inductor of the first partial die of the first wafer are bonded to bond pads formed on the first partial die of the second wafer to establish electrical connection therebetween.

Wafer edge partial die engineered for stacked die yield

In an example implementation, an integrated circuit (IC) includes: a plurality of transistors disposed in a plurality of locations on a die of the IC; conductors coupled to terminals of each of the plurality of transistors; a digital-to-analog converter (DAC), coupled to the conductors, to drive voltage signals to the plurality of transistors in response to a digital input; and an analog-to-digital converter (ADC), coupled to at least a portion of the conductors, to generate samples in response to current signals induced in the plurality of transistors in response to the voltage signals, the samples being indicative of at least one electrostatic characteristic for the plurality of transistors.

In-die transistor characterization in an IC

A circuit for testing bond connections between a first die and a second die is described. The circuit comprises a defect monitoring circuit implemented on the first die, which is configured as a test die; and a plurality of bond connections between the first die and the second die; wherein the defect monitoring circuit is configured to detect a defect in a bond connection of the plurality of bond connections between the first die and the second die. A method of testing bond connections between a first die and a second die is also described.

Circuit for and method of testing bond connections between a first die and a second die

An integrated circuit structure includes: a semiconductor substrate; a shallow trench isolation (STI) region in the semiconductor substrate; one or more active devices formed on the semiconductor substrate; and a resistor array having a plurality of resistors disposed above the STI region; wherein the resistor array comprises a portion of one or more interconnect contact layers that are for interconnection to the one or more active devices.

Method and design of low sheet resistance MEOL resistors

An example clamping assembly tray for packaging a semiconductor device includes a frame having a bottom surface and side walls extending from the bottom surface that define a cavity; and a compressible member disposed on the bottom surface of the frame within the cavity, where a top portion of the compressible member provides a support surface for supporting the semiconductor device, the support surface being between the bottom surface and a top edge of the side walls.

Method and apparatus for assembling and testing a multi-integrated circuit package

An integrated circuit includes a die having a conductive layer. The conductive layer includes a data wire, a first power supply wire of a first voltage potential, and a second power supply wire of a second voltage potential different from the first voltage potential. A segment of the data wire is located between, and substantially parallel to, a segment of the first power supply wire and a segment of the second power supply wire. Further, the first power supply wire is coupled to a first probe structure; and, the second power supply wire is coupled to a second probe structure.

Shielded wire arrangement for die testing

An integrated circuit (IC) comprises routing circuitry including a plurality of signal line segments in routing layers of the IC, and a plurality of micro-bump contacts coupled to the routing circuitry. The IC includes a plurality of test circuits coupled to respective subsets of the plurality of signal line segments. Each test circuit is configured to connect micro-bump contacts in the respective subset to form first and second sets of daisy chains. Each test circuit is configured to test the first and second sets of daisy chains for open circuits and test for short circuits between the first and second sets of daisy chains. Each test circuit is configured to determine the locations of detected open circuits and determine the locations of detected short circuits.

Growing community of inventors

Mountain View, CA, United States of America

Cheang-Whang Chang