Sgs-thomson Microelectronics Limited

Che C Wei

Girish A Dixit

Robert O Miller

Chiara Zaccherini

A polycrystalline silicon layer is deposited and patterned to define a level of interconnect. Contact opening to lower conductive layers are then defined and patterned. A refractory metal such as tungsten is selectively deposited over the device, so that it adheres to the polycrystalline silicon in the interconnect leads and silicon of the lower conductive layer which is exposed in the contact openings. This provides a low resistance interconnect, and good, metal, contacts to underlying layers. Shared contacts between two or more polycrystalline silicon interconnect layers and in underlying conductive layers such as a substrate are easily formed using this technique.

Self-aligned contact formation

A polycrystalline silicon layer is deposited and patterned to define a level of interconnect. Contact openings to lower conductive layers are then defined and patterned. A refractory metal such as tungsten is selectively deposited over the device, so that it adheres to the polycrystalline silicon in the interconnect leads and silicon of the lower conductive layer which is exposed in the contact openings. This provides a low resistance interconnect, and good, metal, contacts to underlying layers. Shared contacts between two or more polycrystalline silicon interconnect layers and in underlying conductive layers such as a substrate are easily formed using this technique.

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Plano, TX, United States of America

Che C Wei