Samsung Electronics Co., Ltd.

Inpria Corporation

Tokyo Ohka Kogyo Co., Ltd.

Inha-industry Partnership Institute

Chawon Koh

Hyunwoo Kim

Tsunehiro Nishi

Brian J Cardineau

Soo Young Choi

Jason K Stowers

Sangyoon Woo

Cheol Hong Park

Kuntack Lee

Young-Hoo Kim

Hyosan Lee

Yong-Jhin Cho

Sunghyun Park

Seok Heo

Kwangsub Yoon

Ki-Jeong Kim

Hyojin Yun

Ji Hoon Cha

Hyosung Lee

Su Min Kim

Sang-Yoon Woo

Jinkyun Lee

Hyejin Jeon

Hyunwoong Hwang

Junil Kim

Hyuntaek Oh

Jihoon Woo

Seungsoo Choi

Soyeon Yoo

Sooyoung Choi

Kumagai Tomoya

A method of manufacturing a semiconductor device, the method including forming a photoresist material layer on a lower film, the photoresist material layer including a crosslinking molecule having a molecular weight of about 1,000 to about 4,000; exposing a partial region of the photoresist material layer; removing an unexposed portion of the photoresist material layer to form a photoresist pattern; and processing the lower film using the photoresist pattern, wherein the crosslinking molecule includes a perfluoro alkyl moiety, the perfluoro alkyl moiety including a carbon-fluorine bond that dissociates in response to the exposing of the partial region of the photoresist material layer.

Method of manufacturing semiconductor device

In a method of manufacturing an integrated circuit device, a photoresist layer is formed by coating a photoresist composition on a substrate having a main surface and an edge portion surrounding the main surface. A portion of the photoresist layer is removed from the edge portion of the substrate. After the portion of the photoresist layer is removed, the substrate is processed using a main treatment composition including an organic solvent, acid, and water.

Method of manufacturing integrated circuit device using a metal-containing photoresist composition

A substrate processing apparatus includes a substrate support configured to support and rotate a substrate, at least one first lower cleaning nozzle configured to spray a first cleaning liquid on a lower surface of the substrate, at least one second lower cleaning nozzle configured to spray a second cleaning liquid on the lower surface of the substrate, a bowl assembly disposed around the substrate support, the bowl assembly including a cup body providing an annular shaped accommodating space and inner and outer collection portions sequentially arranged in a radial direction in a lower portion of the cup body, an annular shaped discharge guide plate disposed in the receiving space of the bowl assembly under the substrate and extending outwardly from a circumference of the substrate, and a discharge separation plate provided within the receiving space of the bowl assembly to be movable upward and downward.

Substrate processing apparatus and substrate processing method

Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.

Photoresist compositions and methods for fabricating semiconductor devices using the same

Disclosed are substrate drying methods, photoresist developing methods, and/or photolithography methods. The substrate drying method including providing a drying liquid on a substrate, increasing a pressure of the drying liquid to produce a supercritical fluid, and removing the supercritical fluid to dry the substrate may be provided.

Substrate drying method, photoresist developing method, photolithography method including the same, and substrate drying system

The disclosed embodiments provide a photoresist composition for extreme ultraviolet (EUV) and a method of forming a photoresist pattern using the same. The photoresist composition includes an out-of-band (OOB) absorbing material absorbing light of a wavelength of 100 nm to 300 nm.

Photoresist composition for extreme ultraviolet and method of forming photoresist pattern using the same

A method for fabricating a semiconductor device is provided. In the method, a first hard mask layer is formed on a stepped structure. The first hard mask layer has a level top surface and thickness sufficient to etch the structure. A second hard mask pattern is formed on the first hard mask layer. The first hard mask layer is etched using the second hard mask pattern. Size dispersion of the patterns may be reduced by the first hard mask layer.

Methods of fabricating a semiconductor device

A photolithographic rinse solution includes deionized water, and a surfactant, the surfactant including a cyclic amine group and at least one non-amine cyclic group joined to or fused with the cyclic amine group, wherein the cyclic amine group includes a ring having a carbon number of 4 to 6, and the non-amine cyclic group includes a ring having a carbon number of 5 to 8.

Photo lithographic rinse solution and method of manufacturing a semiconductor device using the same

Growing community of inventors

Yongin-si, South Korea

Chawon Koh