International Business Machines Corporation

Charlotte R DeWan

Wayne Martin Moreau

Hiroshi Ito

Gregory Breyta

Phillip Joe Brock

Daniel Joseph Dawson

Ronald Anthony DellaGuardia

Leo L Linehan

Premlatha J Jagannathan

Randolph J Smith

Andrew Robert Eckert

Kathleen H Martinek

Several mid UV photo acid generators (PAGs), a chemically amplified photo resist (CAMP), and method for improving nested to isolated line bias are provided. Similarly, photo speed may also be improved. Unlike conventional mid UV PAGs, the present invention's PAG compounds, resist composition, and method do not require a mid UV sensitizer. Specifically, PAGs are provided that bear a chromophore capable of receiving mid UV radiation, particularly I-line, and that are suitable for use in a chemically amplified photo resist having a photo speed of 500 mJ/cm.sup.2 or less, but preferrably 200 mJ/cm.sup.2 or less. For example, the PAGs can be a sulfonium or iodonium salt, such as anthryl, butyl, methyl sulfonium triflate and bis(4-t-butylphenyl)iodonium 9,10-dimethoxyanthracene sulfonate. The chromophore forming a part of the PAGs can be selected from polyaromatic hydrocarbons, for example, chrysenes, pyrenes, fluoranthenes, anthrones, benzophenones, thioxanthones, anthracenes, and phenanthrenes, but preferably anthracenes.

Photo acid generator compounds, photo resists, and method for improving

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Beacon, NY, United States of America

Charlotte R DeWan