Texas Instruments Corporation

Charlotte M Appel

Antonio L P Rotondaro

Robert Kraft

Reima Tapani Laaksonen

Katherine E Violette

Rebecca J Gale

A plasma process is described which produces an undamaged and uncontaminated silicon surface by consuming silicon by continuous oxidation through a surface oxide layer and a simultaneous etch of the exposed silicon oxide surface. The surface silicon dioxide layer thickness is controlled as an equilibrium between oxide growth from oxygen atoms reaching the silicon surface and etching of the oxide surface. The silicon dioxide protects the silicon surface from plasma damage and from contamination.

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Dallas, TX, United States of America

Charlotte M Appel