International Business Machines Corporation

Globalfoundries Inc.

Elpis Technologies Inc.

Charles F Musante

Jeffrey P Gambino

Damyon L Corbin

Wolfgang Sauter

Christopher David Muzzy

Anthony K Stamper

James William Adkisson

Charles Leon Arvin

Kenneth F McAvey, Jr

Timothy Dooling Sullivan

David C Thomas

Max L Lifson

Yoba Amoah

Christine A Leggett

Sruthi Samala

John J Ellis-Monaghan

Ping-Chuan Wang

Timothy Harrison Daubenspeck

Rajendran Krishnasamy

Richard John Rassel

Bruce Walter Porth

Jay Sanford Burnham

Robert Daniel Edwards

George A Dunbar, Iii

Solomon Mulugeta

John C Hall

A package assembly for thin wafer shipping using a wafer container and a method of use are disclosed. The package assembly includes a shipping container and a wafer container having a bottom surface and a plurality of straps attached thereto placed within the shipping container. The package assembly further includes upper and lower force distribution plates provided within the shipping container positioned respectively on a top side and bottom side thereof.

Package assembly for thin wafer shipping and method of use

A method of manufacturing a bond pad structure may include depositing an aluminum-copper (Al&#x2014;Cu) layer over a dielectric layer; and depositing an aluminum-chromium (Al&#x2014;Cr) layer directly over the Al&#x2014;Cu layer.

Corrosion resistant aluminum bond pad structure

The embodiments of the present invention relate to semiconductor device manufacturing, and more particularly, a method of temporarily bonding a semiconductor wafer to a wafer carrier with a multi-layered contact layer as well as a structure. A method is disclosed that includes: forming a first layer on a surface of a semiconductor wafer; forming a second layer on the first layer; bonding a perforated carrier to the second layer; and removing the semiconductor wafer from the perforated carrier. The first layer may be composed of an adhesive. The second layer may be composed of a material having a higher outgassing temperature than the first layer.

Dual adhesive bonding with perforated wafer

A handle wafer which prevents edge cracking during a thinning process and method of using the handle wafer for grinding processes are disclosed. The handle wafer includes a body portion with a bottom surface. A square edge portion is provided about a circumference of the bottom surface.

Handle wafer

A method including forming a through-substrate via through a thickness of a substrate, the thickness of the substrate is measured from a front side of the substrate to a back side of the substrate, removing a first portion of the substrate to form an opening in the back side of the substrate such that a second portion of the substrate remains in direct contact surrounding a vertical sidewall of the through-substrate via, and filling the opening with an alternate material having a lower modulus of elasticity than the substrate.

Tsv wafer with improved fracture strength

Methods of forming a TSV wafer with improved fracture strength

A method including forming a plurality of dicing channels in a front side of a wafer; the plurality of dicing channels including a depth at least greater than a desired final thickness of the wafer, filling the plurality of dicing channels with a fill material and removing a portion of the wafer from a back side of the wafer until the desired final thickness is achieved, where a portion of the fill material within the plurality of dicing channel is exposed. The method further including depositing a metal layer on the back side of the wafer; removing the fill material from within the plurality of dicing channels to expose the metal layer at a bottom of the plurality of dicing channels, and removing a portion of the metal layer located at the bottom of the plurality of dicing channels.

Dice before grind with backside metal

A semiconductor structure, method of manufacturing the same and design structure thereof are provided. The semiconductor structure includes a substrate including a semiconductor layer and a plurality of TSVs embedded therein. At least one TSV has a TSV tip extending from a backside surface of the substrate. The semiconductor structure further includes a multilayer metal contact structure positioned on the backside surface of the substrate. The multilayer metal contact structure includes at least a conductive layer covering the backside surface of the substrate and covering protruding surfaces of the TSV tip. The conductive layer has a non-planar first surface and a substantially planar second surface opposite of the first surface.

Reliable back-side-metal structure

A backside metal ground plane with improved metal adhesion and methods of manufacture are disclosed herein. The method includes forming at least one through silicon via (TSV) in a substrate. The method further includes forming an oxide layer on a backside of the substrate. The method further includes forming a metalized ground plane on the oxide layer and in electrical contact with an exposed portion of the at least one TSV.

Backside metal ground plane with improved metal adhesion and design structures

Growing community of inventors

Burlington, VT, United States of America

Charles F Musante