Tosoh Smd, Inc.

Cabot Corporation

Global Advanced Metals Usa, Inc.

Other

US Government As Represented by the Secretary of the Army

Varian Associates, Inc.

Battelle Development Corporation

Charles E Wickersham, Jr

John E Poole

Lin Zhu

David B Smathers

Eugene Y Ivanov

Alexander Leybovich

Robert B Ford

John P Matera

Mikhail Y Kachalov

David Page Workman

John J Mueller

Susan M Lannutti

Zhiguo Zhang

Larry Edwin Ellison

P Todd Alexander

John D White, Iii

Vladimir Levit

Ellis L Foster

Larry F Vassamillet

Dale G Thompson

Carl W Melton

Teodoro E Brat

Thomas R Tucker

Philip R Frausto

Vladimir I Levit

A method of making sputter targets using rotary axial forging is described. Other thermomechanical working steps can be used prior to and/or after the forging step. Sputter targets are further described which can have unique grain size and/or crystal structures.

Sputter targets and methods of forming same by rotary axial forging

A process is described for processing metal which includes clock rolling a metal plate until the desired thickness is achieved to form a rolled plate. Sputtering targets and other metal articles are further described.

Sputtering target and method of fabrication

Tantalum sputtering target and method of fabrication

Methods for reducing inclusion content of sputter targets and targets so produced are disclosed. Inclusions may be reduced by adding a small amount of Si to the molten Al or molten Al alloy followed by filtering of the molten metals through a filter medium. Targets having substantially no inclusions therein of greater than about 400 &#x3bc;m are especially useful in the sputtering of large flat panel displays and result, upon sputtering, in a reduction in the amount of macroparticles sputtered onto the substrate.

Sputter targets and methods of manufacturing same to reduce particulate emission during sputtering

A method of forming a sputtering target assembly and the sputtering target assembly made therefrom are described. The method includes bonding a sputtering target to a backing plate at a low temperature. Also described is a method of forming a sputtering target assembly such that a gap is formed between the sputtering target and the backing plate. Also described is a method of forming a sputtering target assembly providing a mechanism to prevent unintended sputtering into the backing plate.

Method of forming a sputtering target assembly and assembly made therefrom

A method and apparatus for thermographically evaluating the bond integrity of a sputtering target assembly is described. The method includes applying a heating or cooling medium or energy to one surface of the assembly and acquiring a graphic recording of a corresponding temperature change on the opposing surface of the assembly using an imaging device. Also described is a method of mathematically analyzing the pixel data recorded in each frame to produce an integrated normalized temperature map that represents the bond integrity of the assembly.

Thermography test method and apparatus for bonding evaluation in sputtering targets

The present invention relates to a method for determining a critical size for a diameter of an AlOinclusion () in an Al or Al alloy sputter target () to prevent arcing during sputtering thereof. This method includes providing a sputtering apparatus having an argon plasma. The plasma has a plasma sheath of a known thickness during sputtering under a selected sputtering environment of an Al or Al alloy sputter target having an AlOinclusion-free sputtering surface. When the thickness of the sheath is known for a selected sputtering environment, the critical size of an AlOinclusion () can be determined based upon the thickness of the sheath. More specifically, the diameter of an AlOinclusion () in an Al or Al alloy sputter target () must be less than the thickness of the plasma sheath during sputtering under the selected sputtering environment to inhibit arcing.

Method for determining a critical size of an inclusion in aluminum or aluminum alloy sputtering target

A preferred sputter target assembly (') comprises a target (&#x2032;), a backing plate (&#x2032;) bonded to the target (&#x2032;) along an interface (&#x2032;) and dielectric particles (&#x2032;) between the target (&#x2032;) and the backing plate (&#x2032;). A preferred method for manufacturing the sputter target assembly (&#x2032;) comprises the steps of providing the target (&#x2032;) and the backing plate (&#x2032;); distributing the dielectric particles (&#x2032;) between mating surfaces () of the target (&#x2032;) and the backing plate (&#x2032;), most preferably along a sputtering track pattern on one of the mating surfaces; and bonding the target (&#x2032;) to the backing plate (&#x2032;) along the mating surfaces (). A preferred method for sputtering in accordance with the invention comprises the steps of applying electrical power to the sputter target (); causing the sputter target assembly () to produce an electromagnetic signal (not shown) when a target end-of-life condition exists; and monitoring the sputter target assembly () to detect the electromagnetic signal.

High purity sputter targets with target end-of-life indication and method of manufacture

A method of forming a sputtering target assembly and other metal articles is described. Sputtering target assemblies and metal articles are also described. The method includes bonding a sputter target to a backing plate using resistance heating or welding to bond assembly members that respectively include mating projections and grooves formed in bonding surfaces thereof.

Sputtering target assemblies using resistance welding

A method of constructing increased life sputter targets and targets made by the method are disclosed. The method comprises starting with a precursor target design or profile and making magnetic field strength measurements along the radial surface of same and at a plurality of vertical dimensions above the surface. An optimal magnetic field strength ratio is provided between the erosion tracks of the target. The vertical dimension of the material to be added to one of the erosion tracks is determined and then the height of the other erosion track is calculated by utilizing this optimal magnetic field strength ratio.

Target and method of optimizing target profile

A method of forming a sputtering target is described that involves bonding a backing plate onto a casement having one or more recesses that contain target material to form a bonded target. During the bonding process, the bonded target is optionally vacuum sealed within the recess. The bonded target is then optionally annealed while under vacuum to form an annealed sputtering target. The sputtering target can then be retrieved by removing at least a portion of the casement from the sputtering target in one or several steps. Also described is a casement having one or more recesses containing bonded target material that is optionally vacuum sealed in the casement. The casement, as well as the backing plate that is optionally bonded onto the casement, are further described as well as other options and methods.

Method of bonding sputtering target materials

Methods of bonding a titanium containing sputter target member to a heat conductive backing member, such as a copper backing plate, and bonded target/backing plate assemblies are disclosed. Due to the poor wettability of titanium based materials, a uniform, thin film of aluminum is coated thereover and acts as an anchor layer for application of tin and/or indium based solder layers thereover to securely solder bond the target and backing plate. The aluminum coating is sputter coated onto the target. Then, the coated target is heated in an oxygen containing atmosphere. The thus treated titanium target is then ready for conventional solder joining to a copper backing plate or the like by use of tin, lead, and/or indium based solder metals.

Method of bonding a titanium containing sputter target to a backing

Tungsten-titanium sputter targets of at least 95% theoretical density are provided with little or no .beta.(Ti, W) phase constituent. Such targets will minimize troublesome particulate emissions during sputter coating conditions.

Method of producing tungsten-titanium sputter targets and targets

The present invention provides a sputter target for the deposition of titanium nitride films. The sputter target has a target face comprising titanium nitride having a density of at least 90% of the theoretical density of 100% pure titanium nitride. The sputter target is prepared by subjecting titanium nitride powder to hot isostatic pressure.

Growing community of inventors

Columbus, OH, United States of America

Charles E Wickersham, Jr