Asm IP Holding B.v.

Charles Dezelah

Giuseppe Alessio Verni

Qi Xie

Eric James Shero

Jan Willem Maes

Eva E Tois

Varun Sharma

Michael Givens

Viljami J Pore

Marko J Tuominen

Elina Färm

Andrea Illiberi

Ren-Jie Chang

Petro Deminskyi

Shaoren Deng

Daniele Chiappe

Shinya Iwashita

Viraj Madhiwala

Suvi P Haukka

Michael Eugene Givens

Petri Raisanen

Shankar Swaminathan

Bhushan Zope

Timothee Blanquart

René Henricus Jozef Vervuurt

Eric Christopher Stevens

Jiyeon Kim

Lifu Chen

Maart Van Druenen

Paul F Ma

Dieter Pierreux

Bert Jongbloed

Henri Jussila

YongGyu Han

Anirudhan Chandrasekaran

Daria Nevstrueva

Ivo Johannes Raaijmakers

Antti Niskanen

Tom E Blomberg

Hideaki Fukuda

Chiyu Zhu

Hannu Huotari

Werner Knaepen

Delphine Longrie

Petri Räisänen

Rami Khazaka

Oreste Madia

Kelly Houben

Steven Van Aerde

VamsI Paruchuri

Tatiana Ivanova

Wilco Verweij

Kishan Ashokbhai Patel

Vincent Vandalon

Janne-Petteri Niemelä

Patricio Romero

Saima Ali

Bart Vermeulen

Wonjong Kim

Methods and related systems for forming an EUV-sensitive layer. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a first precursor pulse and a second precursor pulse. The first precursor pulse comprises exposing the substrate to a first precursor. The first precursor comprises two or more acyl halide functional groups. The second precursor pulse comprises exposing the substrate to a second precursor. In some embodiments, the second precursor comprises two or more hydroxyl functional groups.

Photosensitive material and method of forming patterned structures

Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

Selective passivation and selective deposition

The present disclosure relates to methods and apparatuses for the manufacture of semiconductor devices. More particularly, the disclosure relates to methods and apparatuses for depositing an organic layer selectively on a substrate comprising at least two different surfaces. The process comprises providing a substrate in a reaction chamber, providing a first vapor-phase precursor in the reaction chamber, and providing a second vapor-phase precursor in the reaction chamber. In the method, the first and second vapor-phase precursors form the organic material selectively on the first surface relative to the second surface, and the first vapor-phase precursor comprises a diamine compound comprising at least five carbon atoms and the amine groups being attached to non-adjacent carbon atoms.

Selective deposition of organic material

A multiple-layer method for forming material within a gap on a surface of a substrate is disclosed. An exemplary method includes forming a layer of first material overlying the substrate and forming a layer of second (e.g., initially flowable) material within a region of the first material to thereby at least partially fill the gap with material in a seamless and/or void less manner.

Multiple-layer method and system for forming material within a gap

Disclosed are methods and systems for depositing layers comprising vanadium and oxygen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Methods and systems for forming a layer comprising vanadium and oxygen

Some examples herein provide a method of forming a doped silicon germanium layer. The method may include simultaneously exposing a substrate to (a) a silicon precursor, (b), a germanium precursor, (c) a boron precursor, and (d) a heteroleptic gallium precursor. The heteroleptic gallium precursor may include (i) at least one straight chain alkyl group in which a terminal carbon is directly bonded to gallium, and (ii) at least one tertiary alkyl group in which a tertiary carbon is directly bonded to gallium. The method may include reacting the silicon precursor, the germanium precursor, the boron precursor, and the heteroleptic gallium precursor to form a silicon germanium layer on the substrate that is doped with boron and gallium.

Structures with boron- and gallium-doped silicon germanium layers and methods and systems for forming same

Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Methods and systems for filling a gap

Methods are provided for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. A transition metal nitride layer, a semiconductor structure and a device, as well as a deposition assembly for depositing a transition metal nitride on a substrate are further provided.

Transition metal nitride deposition method

The current disclosure relates to a method of etching etchable material from a semiconductor substrate. The method comprises providing a substrate comprising the etchable material into a reaction chamber and providing a haloalkylamine into the reaction chamber in vapor phase for etching the etchable material. The disclosure further relates to a semiconductor processing assembly, and to a method of cleaning a reaction chamber.

Etch process and a processing assembly

A method and a wafer processing furnace for forming an epitaxial stack on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing plurality of substrates to a process chamber. A plurality of deposition cycles are executed, thereby forming the epitaxial stack on the plurality of substrates. The epitaxial comprises a plurality of epitaxial pairs, each pair comprising a first epitaxial layer and a second epitaxial layer. The deposition cycle comprises a first deposition pulse and a second deposition pulse. The first deposition pulse comprises a provision of a first reaction gas mixture to the process chamber, thereby forming the first epitaxial layer and the second deposition pulse comprises a provision of a second reaction gas mixture to the process chamber, thereby forming the second epitaxial layer.

Method and wafer processing furnace for forming an epitaxial stack of semiconductor epitaxial layers on a plurality of substrates

The current disclosure relates to methods for forming a film comprising transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and a device comprising a layer that comprises a transition metal. In the method, transition metal is deposited on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reactor chamber and executing a cyclical deposition process. The cyclical deposition process comprises the steps of providing a transition metal precursor in vapor phase into the reaction chamber and providing a halogen precursor in vapor phase into the reaction chamber to form a film comprising elemental transition metal on a substrate. The halogen precursor comprises only one halogen atom. The disclosure further relates to a deposition assembly for depositing a material comprising transition metal on a substrate.

Transition metal deposition processes and deposition assembly

Disclosed are methods and systems for depositing layers comprising a titanium, aluminum, and carbon. The layers are formed onto a surface of a substrate. The deposition process comprises a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Methods and systems for forming a layer comprising aluminum, titanium, and carbon

A method may comprise disposing vanadium tetrachloride in a delivery vessel; delivering the vanadium tetrachloride to a reaction chamber in fluid communication with the delivery vessel; mitigating the delivery of decomposition products of the vanadium tetrachloride to the reaction chamber; and/or applying the vanadium tetrachloride to a substrate disposed in the reaction chamber to form a layer comprising vanadium on the substrate.

Methods and systems for delivery of vanadium compounds

Methods and systems for depositing a layer, comprising one or more of vanadium boride and vanadium phosphide, onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a deposition process. The deposition process can include providing a vanadium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. Exemplary structures can include field effect transistor structures, such as gate all around structures. The layer comprising one or more of vanadium boride and vanadium phosphide can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

Methods of forming structures including vanadium boride and vanadium phosphide layers

Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.

Method of forming vanadium nitride layer and structure including the vanadium nitride layer

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Helsinki, Finland

Charles Dezelah