Vanguard International Semiconductor Corporation

Chao-Wei Wu

Chih-Wei Lin

Pi-Kuang Chuang

Tsung-Han Lin

Yen-Kai Chen

A method of fabricating a semiconductor device is provided. In the method, a gate structure is formed on a semiconductor substrate. A photolithography process is performed with a mask having two transparent regions to form a photoresist layer having two openings in the semiconductor substrate. A first photoresist layer of the photoresist layer between the two openings is aligned to the gate structure and formed on the gate structure. The width of the first photoresist layer is shorter than the width of the gate structure such that a first side portion and a second side portion of the gate structure are exposed from both sides of the first photoresist layer, respectively. Next, an ion implantation process is performed to form lightly doped drain regions in the semiconductor substrate which are on two opposite sides of the gate structure of the photoresist layer.

Method of fabricating semiconductor device

A high-voltage semiconductor device is provided. The device includes a semiconductor substrate including a well region of a first conductivity type and an isolation structure in the well region. First and second regions are respectively defined on both sides of the isolation structure. First and second gate structures are respectively disposed on the first and second regions. First and second implant regions of a second conductivity type that is different from the first conductivity type are respectively in the first and second regions and adjacent to the isolation structure. A counter implant region is in the well region under the isolation structure and laterally extends under the first and second implant regions. The counter implant region has the first conductivity type and has a doping concentration that is greater than that of the well region. A method for fabricating the high-voltage semiconductor device is also disclosed.

Growing community of inventors

Changhua, Taiwan

Chao-Wei Wu