United Microelectronics Corp.

Chao Nan Chen

Kuang-Hsiu Chen

Chun-Wei Yu

Shao-Wei Wang

Kuan Hsuan Ku

Wei-Chung Sun

Provided are a semiconductor structure and a manufacturing method thereof. The manufacturing method of the semiconductor structure includes the following. A gate structure is formed on a substrate. A tilt implanting process is performed to implant group IV elements into the substrate to form a doped region, and the doped region is located on two sides of the gate structure and partially located under the gate structure. A part of the substrate on two sides of the gate structure is removed to form a first recess. A cleaning process is performed on the surface of the first recess. A wet etching process is performed on the first recess to form a second recess. A semiconductor layer is formed in the second recess.

Growing community of inventors

Tainan, Taiwan

Chao Nan Chen