Semiconductor Manufacturing International (Shanghai) Corporation

Semiconductor Manufacturing International (Beijing) Corporation

Semiconductor Manufacturing (Shanghai) International Corporation

Semiconductor Manufacturing (Beijing) International Corporation

Changzhou Wang

Jiquan Liu

A capacitor structure and a forming method thereof are provided. The capacitor structure includes a substrate and a bottom electrode composite layer on the substrate. The bottom electrode composite layer includes a first electrode layer and a second electrode layer on the first electrode layer. An oxidation rate of a material of the second electrode layer is lower than an oxidation rate of a material of the first electrode layer. The capacitor structure also includes a dielectric structure layer on the bottom electrode composite layer.

Capacitor structure and forming method thereof

The present disclosure discloses a resistive random access memory (RRAM) and a method for manufacture the RRAM. The method includes: providing a bottom interconnection layer; forming a bottom dielectric layer above the bottom interconnection layer, the bottom dielectric layer comprising a via through the bottom dielectric layer that exposes a portion of the bottom interconnection layer; and forming a bottom electrode layer in the via, the bottom electrode layer including a first electrode selectively grown above the bottom interconnection layer. The bottom electrode layer manufactured in such a way provides improved filling capability of the bottom electrode layer in the via.

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Shanghai, China

Changzhou Wang