Applied Materials, Inc.

Changling Li

Deenesh Padhi

Hang Yu

Sanjay G Kamath

Vinayak Veer Vats

Abhijit Basu Mallick

Soo Young Choi

Philip Allan Kraus

Mark Joseph Saly

Mihaela A Balseanu

Robin L Tiner

Thai Cheng Chua

Gaku Furuta

Lakmal Charidu Kalutarage

Lai Zhao

William John Durand

Ganesh Babu Chandrasekaran

David Atchley

Gregory M Amico

A diffuser includes a front-side gradient surface formed from a diffuser block, a back-side gradient surface formed from the diffuser block, and opening structures formed from the front-side gradient surface to the back-side gradient surface. Each opening structure includes a conical opening having a first end along the front-side gradient surface and a second end corresponding to an apex at a depth within the diffuser block, and a cylindrical opening formed from the depth to the back-side gradient surface. The opening structures are arranged in rows including a first set of rows and a second set of rows alternately positioned along a length of the diffuser block.

Deposition chamber system diffuser with increased power efficiency

Embodiments disclosed herein include methods of forming high quality silicon nitride films. In an embodiment, a method of depositing a film on a substrate may comprise forming a silicon nitride film over a surface of the substrate in a first processing volume with a deposition process, and treating the silicon nitride film in a second processing volume, wherein treating the silicon nitride film comprises exposing the film to a plasma induced by a modular high-frequency plasma source. In an embodiment, a sheath potential of the plasma is less than 100 V, and a power density of the high-frequency plasma source is approximately 5 W/cmor greater, approximately 10 W/cmor greater, or approximately 20 W/cmor greater.

Sequential deposition and high frequency plasma treatment of deposited film on patterned and un-patterned substrates

Embodiments of the present disclosure relate to methods for in-situ deposition and treatment of a thin film for improved step coverage. In one embodiment, the method for processing a substrate is provided. The method includes forming a dielectric layer on patterned features of the substrate by exposing the substrate to a gas mixture of a first precursor and a second precursor simultaneously with plasma present in a process chamber, wherein the plasma is formed by a first pulsed RF power, exposing the dielectric layer to a first plasma treatment using a gas mixture of nitrogen and helium in the process chamber, and performing a plasma etch process by exposing the dielectric layer to a plasma formed from a gas mixture of a fluorine-containing precursor and a carrier gas, wherein the plasma is formed in the process chamber by a second pulsed RF power.

Pulsed plasma deposition etch step coverage improvement

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Sunnyvale, CA, United States of America

Changling Li