United Microelectronics Corp.

Changda Yao

Xiang Li

Ding Lung Chen

A method of manufacturing a capacitor structure is provided, including the following steps. A substrate is provided. A first doped silicon material layer is formed on the substrate. A surface flattening process is performed on the first doped silicon material layer through a plasma treatment. An insulating material layer is formed on the first doped silicon material layer after the surface flattening process is performed. A second doped silicon material layer is formed on the insulating material layer. The first doped silicon material layer is patterned into a first electrode. The insulating material layer is patterned into an insulating layer. The second doped silicon material layer is patterned into a second electrode. The method of manufacturing the capacitor structure may be used to produce a capacitor with better reliability and may improve capacitance density.

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Changda Yao