Samsung Electronics Co., Ltd.

Chang-Woo Sohn

Shigenobu Maeda

Young-Moon Choi

Do-Sun Lee

Dong-Woo Kim

Sang-Jin Hyun

Chul-Sung Kim

Hyo-Seok Choi

Yong-Bum Kwon

Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes an isolation layer defining active portions of the substrate that are spaced apart from each other in a direction. The semiconductor device includes an epitaxial layer on the active portions. The semiconductor device includes a metal silicide layer on the epitaxial layer. Moreover, the semiconductor device includes a contact structure that only partially overlaps the metal silicide layer on the epitaxial layer. Related methods of forming semiconductor devices are also provided.

Semiconductor devices including contact structures that partially overlap silicide layers

Semiconductor devices may include a plurality of active fins each extending in a first direction on a substrate, a gate structure extending on the active fins in a second direction, and a first source/drain layer on first active fins of the active fins adjacent the gate structure. At least one of two opposing sidewalls of a cross-section of the first source/drain layer taken along the second direction may include a curved portion having a slope with respect to an upper surface of the substrate. The slope may decrease from a bottom toward a top thereof.

Semiconductor devices including active fins and methods of manufacturing the same

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Hwaseong-si, South Korea

Chang-Woo Sohn