Samsung Electronics Co., Ltd.

Chang-min Park

Kyung-geun Lee

In-sik Park

Du-seop Yoon

Myong-do Ro

Jeong-Ho Yeo

In-oh Hwang

Joo-On Park

In-Sung Kim

Myung-soo Hwang

Jae-seong Shim

Chong-sam Chung

Young-man Ahn

Jin-hong Park

Seok-Hwan Oh

Jin-seok Heo

Jung-wan Ko

Yong-Jin Ahn

Dong-Wan Kim

Dong-gun Lee

Cha-Won Koh

Hyun-ki Kim

Jin-han Kim

Joo-Ho Kim

Byeong-Ok Cho

Bong-hyun Kim

Hyo-Jung Kim

Soo-jin Hong

Jeong-Hoon Lee

Sun-mo Kim

Yoon-ki Kim

Won-Sun Kim

Sang-hyun Kim

Su-Min Kim

Myong-Do Ro

Jin-Seok Heo

Min-Joon Park

Do-hoon Chang

Dong-Woon Shin

Nak-hyun Kim

Jooon Park

Doo-Hoo Goo

Myung-do Ro

Seouk-Hoon Woo

Ji-sun Lee

An extreme ultraviolet (EUV) exposure system capable of improving the yield of an EUV exposure process by improving EUV exposure performance, and furthermore, capable of increasing throughput or productivity of the EUV exposure process, the EUV exposure system including an EUV exposure apparatus configured to perform EUV exposure on a wafer disposed on a chuck table, a load-lock chamber combined with the EUV exposure apparatus and configured to supply and discharge the wafer to/from the EUV exposure apparatus, and an ultraviolet (UV) exposure apparatus configured to perform UV exposure by irradiating an entire upper surface of the wafer with a UV light without using a mask.

Extreme ultraviolet (EUV) exposure system and method of manufacturing semiconductor device using the same

A method of manufacturing a mask includes dividing an upper surface of a template having a design pattern into a plurality of regions, the template being arranged over a polymer layer on a mask substrate, correcting a distorted region among the regions, pressing the polymer layer with the template to form a mask pattern corresponding to the design pattern on the polymer layer; and curing the mask pattern.

Method of manufacturing a mask

A pellicle for a reflective mask including a pellicle body, a light shielding pattern, a grating pattern, and a pellicle frame. The pellicle body includes a central region and a peripheral region, wherein the peripheral region surrounds the central region. The light shielding pattern is formed on the peripheral region of the pellicle body; the grating pattern is formed on the light shielding pattern, and the pellicle frame is located under the peripheral region of the pellicle body, and the pellicle frame is configured to support the pellicle body.

Pellicle for a reflective mask and reflective mask assembly including the same

A reflective extreme ultraviolet (EUV) mask includes a mask substrate, a reflecting layer on an upper surface of the mask substrate, and an absorbing layer pattern on an upper surface of the reflecting layer, the absorbing layer pattern having an exposing region and a peripheral region, and the absorbing layer pattern including a grating pattern in the peripheral region to reduce reflectivity of light incident on the peripheral region.

Reflective extreme ultraviolet mask

Provided are a lithography apparatus, a method for lithography and a stage system. The lithography apparatus includes a reticle stage having a reticle, at least one nozzle on at least one surface of the reticle stage and configured to allow shielding gas to flow to a surface of the reticle to form an air curtain, and a gas supply unit configured to supply the nozzle with the shielding gas.

Lithography apparatus, method for lithography and stage system

An apparatus for protecting an extreme ultra violet (EUV) mask includes an EUV pellicle that allows EUV light to be radiated through the EUV pellicle onto the EUV mask, the EUV pellicle having a size corresponding to a size of a slit limiting the EUV light to a predetermined portion of the EUV mask, a flexible blocking film at opposite sides of the EUV pellicle in a first direction, the first direction being a scan direction of an exposure apparatus, and a roller unit including a first roller and a second roller, a first portion of the flexible blocking film being wound around the first roller at a first side of the EUV pellicle, and a second portion of the flexible blocking film being wound around the second roller at a second side of the EUV pellicle.

Apparatus for protecting extreme ultra violet mask and extreme ultra violet exposure apparatus including the same

Apparatus for manufacturing a mask

An apparatus for creating an EUV light may include a droplet-supplying unit, a laser-irradiating unit, a light-concentrating unit and a guiding unit. The droplet-supplying unit may supply a droplet from which the EUV light may be created. The laser-irradiating unit may irradiate a laser to the droplet supplied from the droplet-supplying unit to create the EUV light. The light-concentrating unit may concentrate the EUV light created by the laser-irradiating unit. The guiding unit may guide the droplet to a position at which the laser may be irradiated. The guiding unit may have at least one gas-spraying hole for spraying a gas to a space between the droplet-supplying unit and the laser irradiation position to form a gas curtain configured to surround the droplet.

Apparatus for creating an extreme ultraviolet light, an exposing apparatus including the same, and electronic devices manufactured using the exposing apparatus

The inventive concept provides methods of manufacturing semiconductor devices having a fine pattern. In some embodiments, the methods comprise forming an etch-target film on a substrate, forming a first mask pattern on the etch-target film, forming a second mask pattern by performing an ion implantation process in the first mask pattern, and etching the etch-target film using the second mask pattern.

Methods of forming a fine pattern on a substrate and methods of forming a semiconductor device having a fine pattern

A method of inspecting a structure. The method includes preparing preliminary spectrums of reference diffraction intensities according to critical dimensions of reference structures, obtaining a linear spectrum from the preliminary spectrums in a set critical dimension range, radiating light to respective measurement structures formed on a substrate, measuring measurement diffraction intensities of the light diffracted by the measurement structures, and obtaining respective critical dimensions of the measurement structures from the measurement diffraction intensities using the linear spectrum.

Methods of inspecting structures

An optical disc includes a plurality of recording layers, each layer having a lead-in area, a data area, and a lead-out area. A dedicated-reproducing area having a disc-related information zone, and a rewritable area are provided in at least one of the lead-in and lead-out areas of the optical disc. Accordingly, a reliability of a data recording/reproducing with respect to the optical disc is improved.

Optical disc having a plurality of recording layers, and recording method and reproducing method therefor

Provided are a reflective reticle chuck, a reflective illumination system including the chuck, a method of controlling the flatness of a reflective reticle using the chuck, and a method of manufacturing a semiconductor device using the chuck. The reflective reticle chuck includes a fixed portion and a mobile portion that together provide a securing surface for the reflective reticle. The mobile portion may alter a height of the securing surface relative to the fixed portion.

Reflective reticle chuck, reflective illumination system including the same, method of controlling flatness of reflective reticle using the chuck, and method of manufacturing semiconductor device using the chuck

Method of forming fine patterns and methods of fabricating semiconductor devices by which a photoresist (PR) pattern may be transferred to a medium material layer with a small thickness and a high etch selectivity with respect to a hard mask to form a medium pattern and the hard mask may be formed using the medium pattern. According to the methods, the PR pattern may have a low aspect ratio so that a pattern can be transferred using a PR layer with a small thickness without collapsing the PR pattern.

Methods of forming fine patterns and methods of fabricating semiconductor devices

A flare evaluation method includes: extracting DC flare reference data using a preliminary measurement pattern mask and a dummy mask having an open region in which a preliminary measurement pattern is formed; providing a plurality of flare gauge sets including an opaque pad, a measurement pattern, and a flare pattern, the measure pattern being disposed at an inside of the opaque pad to measure strength of a flare, the flare pattern being disposed at an outside of the opaque pad to generate the flare; and detecting a change of a photo resist measurement pattern caused by the flare pattern and the measurement pattern for each of the flare gauge sets, wherein an outer radius of the flare pattern increases by a predetermined amount depending on the flare gauge set.

Flare evaluation methods

An optical information storage medium includes a lead-in area, a lead-out area, and a user data area between the lead-in and lead-out areas and in which user data is recorded. Pits are formed in the lead-in area, the user data area, and the lead-out area, and a track pitch in all or a portion of the lead-in area is different from a track pitch in the remaining area of the optical information storage medium.

Method of transferring data with respect to an optical information storage medium having different track pitches

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Gyeonggi-do, South Korea

Chang-min Park