Wonik Ips Co., Ltd.

Chang Hun Kim

Kyung Tea Park

Dae Seong Lee

Won Jun Jang

Joo Suop Kim

Ah Young Hwang

Jin Seo Kim

Hae Jin Ahn

Won Sik Ahn

Sang Rok Nam

The present invention relates to an internal chamber processing method, and more particularly, to an internal chamber processing method for performing processing on a chamber and a component inside the chamber. Disclosed is an internal chamber processing method for processing the inside of a chamber in which substrate processing is performed, the method including a pressurizing operation (S) of raising a pressure inside a chamber to a first pressure (P) higher than the atmospheric pressure by using a pressurized gas and a depressurizing operation of lowering the pressure inside the chamber from the first pressure (P) to a second pressure (P) after the pressurizing operation (S). The pressurizing operation (S) and the depressurizing operation (S) are performed in a state in which a substrate to be processed is removed from the inside of the chamber.

Internal chamber processing method and substrate processing method

Disclosed is a substrate processing method including: a pressurizing operation of raising a process pressure from a first pressure (P) to a second pressure (P) that is greater than the atmospheric pressure; a depressurizing operation of lowering the process pressure from a sixth pressure (P), which is greater than the atmospheric pressure, to a seventh pressure (P); and an annealing operation of changing the process pressure into a preset pressure change pattern between the pressurizing operation and the depressurizing operation, under a temperature atmosphere of a second temperature (T) higher than the room temperature. A temperature raising operation of raising a temperature atmosphere from a first temperature (T) to the second temperature (T) is performed from a preset temperature raising start point (t) to a preset temperature raising end point (t) while the pressurizing operation is performed or after the pressurizing operation is performed.

Substrate processing method

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Osan-si, South Korea

Chang Hun Kim