Wonik Ips Co., Ltd.

Chang Hee Han

Sang Jun Park

Sung Ho Roh

Byoung Guk Son

Tae Ho Jeon

Sang Jin Lee

Tae Ho Kim

Sung Eun Lee

Ja Hyun Koo

Yeong Taek Oh

Woo Young Park

Sung Ho Jeon

The present invention provides a substrate processing apparatus including: a process chamber having a process space in which a substrate is processed; a substrate support including a susceptor having a plurality of pocket grooves recessed in a circumferential direction from a top surface with a circular plate shape so that the substrate is seated, a shaft configured to rotate the susceptor, and a satellite seated in the pocket groove and on which the substrate is seated; and a gas injection unit disposed at an upper portion of the process chamber to face the substrate support, thereby injecting a process gas toward the substrate support.

Substrate processing apparatus

Provided is a method for forming a thin film. The method for forming the thin film includes forming a first thin film having a first thickness with first crystallinity through an atomic layer deposition process and etching the first thin film by a predetermined thickness through an atomic layer etching process with respect to the first thin film to form a second thin film having a second thickness less than the first thickness.

Method for forming thin film

Growing community of inventors

Pyeongtaek-si, South Korea

Chang Hee Han