Taiwan Semiconductor Manufacturing Comp. Ltd.

Chang-Cheng Hung

Chin-Hsiang Lin

Shih-Ming Chang

Hung-Chang Hsieh

Wen-Chuan Wang

Chi-Lun Lu

Yen-Bin Huang

Hsin-Chang Lee

Chia-Jen Chen

Ren-Guey Hsieh

Tyng-Hao Hsu

Chen-Yuan Hsia

Ching-Yu Chang

Tsai-Sheng Gau

Luke Hsu

Chuan-Yuan Lin

Ken Wu

Jaw-Jung Shin

Dong-Hsu Cheng

Hung Chang Hsieh

Yung-Haw Liaw

Yi-Hsu Chen

Hong-Chang Hsieh

Deng-Guey Juang

Cheng-Tung Hsu

Jeen-Hao Liu

Tyrone Kuo

Allen Hsia

Hsen-Lin Wu

Kai-Chung Liu

Shin-Ying Chen

Chia-Yang Chang

Chin Hsiang Lin

Chih Cheng Chin

A semiconductor package includes a flexible substrate and a semiconductor device. The flexible substrate includes a device bonding region and a device top metallization structure including a plurality of device signal lines and a plurality of device power lines extended beyond the device bonding region. The semiconductor device is disposed on the device bonding region and includes an interconnecting metallization structure and a passivation layer covering the interconnecting metallization structure and revealing a plurality of interconnect contacts of the interconnecting metallization structure, wherein the plurality of interconnect contacts electrically connected to one another through the device top metallization structure.

Semiconductor package, display apparatus and manufacturing method of semiconductor package

A mask substrate, photomask and method for forming the same are provided. The photomask includes a substantially light transparent substrate and a circuitry pattern disposed over the light transparent substrate. The circuitry pattern includes a phase shifting layer disposed over the substantially light transparent substrate. A substantially light shielding layer is disposed over the phase shifting layer. At least one barrier layer is disposed over the substantially light shielding layer. An uppermost portion of the substantially light shielding layer does not comprise anti-reflective properties and the at least one barrier layer comprises an uppermost hardmask layer and an underlying anti-reflective layer.

Photomask and photomask substrate with reduced light scattering properties

A method for inspecting semiconductor wafers patterned by a photomask includes loading a first wafer and scanning a first image of the first wafer, loading a second wafer and scanning a second image of the second wafer, comparing the first and second images, and classifying a difference detected between the first and second images as a potential defect on the photomask. The potential defect includes a haze defect on the photomask.

Method and system for wafer inspection

A mask and method for forming the same including carrying out a photolithographic patterning process the method including providing a substantially light transparent portion; forming a substantially light shielding layer disposed over the substantially light transparent portion; forming at least one barrier layer disposed over the substantially light shielding layer; forming a resist layer disposed over the at least one barrier layer; patterning the resist layer for producing a circuitry pattern; and, carrying out an etching process according to the circuitry pattern to expose a portion of the substantially light transparent portion to form a mask.

Method for forming a robust mask with reduced light scattering

A system for semiconductor wafer manufacturing, comprises a chamber process path for processing the wafer, and a device operable to remove particles from the wafer by electrostatic and electromagnetic methodologies wherein the device is installed in the chamber process path.

System and method for removing particles in semiconductor manufacturing

A method for patterning a substrate includes forming a material layer on the substrate; performing a first etching on the material layer to form a pattern; measuring the pattern of the material layer using an optical spectrum metrology tool; determining whether the measuring indicates that the etching step achieved a predefined result; and producing an etching recipe and performing a second etching of the material layer using the etching recipe if the predefined result was not achieved.

Critical dimension (CD) control by spectrum metrology

A method and system is disclosed for inspecting defects on a wafer. After acquiring at least one digitized image of at least one portion of a wafer, at least one design database file corresponding to the portion of the wafer is converted into at least one inspection file. After setting one or more error detection thresholds, the digitized image and the inspection file are compared by an inspection tool for detecting defects with regard to the portion of the wafer based on the set error detection thresholds.

System and method for inspecting errors on a wafer

A system and method are disclosed for monitoring a dimensional change of a pattern for an object having a transparent layer exposed through the pattern and a non-transparent pattern laminated therewith. According to the method, a first beam is projected to the pattern. A second beam resulted from the first beam passing through the transparent layer exposed by the pattern, or from the first beam reflected from the non-transparent layer of the pattern, is detected. A value of a predetermined property from the second beam detected is obtained. A variation of the value is monitored for identifying the dimensional change of the pattern.

Dimension monitoring method and system

A progressive self-learning (PSL) method is provided for enhancing wafer or mask defect inspection review and classification by identifying a plurality of wafer or mask defects, and by classifying each of the plurality of defects according to an extent of resemblance of each defect. The method having the steps of: performing image processing on a scanned defect image; aligning the scanned defect image with a just-stored digitized defect image; matching the scanned defect image with a just-stored digitized defect image; and classifying the scanned defect image.

Progressive self-learning defect review and classification method

Secondary mask pattern elements are used to interconnect isolated sub-patterns of a mask pattern. The interconnection of the isolated sub-patterns prevents different electrostatic charge accumulation on the various isolated sub-patterns. This prevents mask damage due to electrostatic discharge, problems with mask inspection, and problems with mask repair due to different electrostatic charge accumulation on various isolated sub-patterns. The mask is used to transfer the mask pattern to a layer of photosensitive material. The width of the secondary sub-pattern elements are sufficiently small relative to the wavelength of the light used to transfer the mask pattern to the photosensitive material that the secondary sub-pattern elements are not transferred to the photosensitive material.

Charge effect and electrostatic damage prevention method on photo-mask

An increased-contrast film for high-transmittance attenuated phase-shift masks (PSM's) is disclosed. A high-transmittance attenuated PSM includes a clear substrate, a shifter film selectively covering the clear substrate, and an increased-contrast film covering the shifter film to aid inspection of the PSM. The increased-contrast film may be removable, and may be photoresist. The increased-contrast film is preferably non-reactive to light used during the inspection of the PSM.

Increased-contrast film for high-transmittance attenuated phase-shaft masks

A new method is provided for the creation of a seal ring or fuse ring over the surface of a Phase Shift Mask. A seal ring pattern is created over the surface of a phase shift mask through a layer of phase shift material and a layer of opaque material. The seal ring is surrounded by a layer of opaque material by etching the layer of opaque material.

Method to prevent side lobe on seal ring

The use of dual-focused ion beams for semiconductor image scanning and mask repair is disclosed. A mask is imaged with either a focused negative ion beam, such as a focused oxygen ion beam, or a focused positive ion beam, such as a focused gallium ion beam. Mask imaging is also referred to as image scanning. Defects in the mask are repaired with the ion beam not used in imaging of the mask. Also disclosed is image scanning being performed with the focused negative ion beam to neutralize potential charge buildup, and mask repair being performed with the focused positive ion beam. An apparatus is disclosed that has a negative ion mechanism supplying negative ions, a positive ion mechanism supplying positive ions, a filter to select the desired ratio of the negative to the positive ions, and an aiming mechanism to focus the ions onto the mask.

Growing community of inventors

Jhubei, Taiwan

Chang-Cheng Hung