Intel Corporation

Chandra Mohan Jha

Zhimin Wan

Weihua Tang

Chia-Pin Chiu

Pooya Tadayon

Je-Young Chang

Robert L Sankman

Xavier Francois Brun

Krishna Vasanth Valavala

Feras Eid

Shankar Devasenathipathy

Kelly P Lofgreen

Shrenik Kothari

Cheng Xu

Junnan Zhao

Sergio Antonio Chan Arguedas

Johanna M Swan

Debendra Mallik

Omkar G Karhade

Ravindranath Vithal Mahajan

Eric Jin Li

Yikang Deng

Ashish Gupta

Pramod Malatkar

Ying Wang

Jimin Yao

Nicholas Neal

Prasad Ramanathan

David Wolk Mendel

Nachiket R Raravikar

Kyu Oh Lee

Sairam Agraharam

Robert M Nickerson

Andrew Paul Collins

Edvin Cetegen

Joe F Walczyk

Chong Zhang

Paul J Diglio

Kyu-Oh Lee

Purushotham Kaushik Muthur Srinath

Kyle Yazzie

Peng Li

Aravindha Antoniswamy

Aastha Uppal

Mihir A Oka

Arnab Choudhury

Liwei Wang

Zhaozhi Li

Kedar Dhane

Hitesh Arora

Prasanna Raghavan

Betsegaw Kebede Gebrehiwot

Lingtao Liu

Venkata Suresh R Guthikonda

Mark Allen

Jimmin Yao

An example microelectronic assembly includes a substrate, a bridge die over the substrate, and a die stack between the substrate and the bridge die, the die stack including a logic die and at least one memory die, where the logic die is between the at least one memory die and the bridge die.

Integrated circuit package with flipped high bandwidth memory device

Embodiments disclosed herein include semiconductor dies and methods of forming such dies. In an embodiment, the semiconductor die comprises a semiconductor substrate, an active device layer in the semiconductor substrate, where the active device layer comprises one or more transistors, an interconnect layer over a first surface of the active device layer, a first bonding layer over a surface of the semiconductor substrate, a second bonding layer secured to the first bonding layer, and a heat spreader attached to the second bonding layer.

Semiconductor device stack-up with bulk substrate material to mitigate hot spots

Embodiments may relate to a microelectronic package that includes a die coupled with a package substrate. A plurality of solder thermal interface material (STIM) thermal interconnects may be coupled with the die and an integrated heat spreader (IHS) may be coupled with the plurality of STIM thermal interconnects. A thermal underfill material may be positioned between the IHS and the die such that the thermal underfill material at least partially surrounds the plurality of STIM thermal interconnects. Other embodiments may be described or claimed.

Microelectronic package with solder array thermal interface material (SA-TIM)

Embodiments include semiconductor packages. A semiconductor package includes a hybrid interposer with a first region and a second region. The first region is comprised of glass or low thermal conductive materials, and the second region is comprised of silicon or diamond materials. The semiconductor package includes a first die on the first region of the hybrid interposer, a second die on the second region of the hybrid interposer, and an integrated heat spreader over the first die, the second die, and the hybrid interposer. The hybrid interposer includes first and second interconnects, where the first interconnects vertically extend from a bottom surface of the first region to a top surface of the first region, and where the second interconnects vertically extend from a bottom surface of the second region to a top surface of the second region. The first interconnects are through-glass vias, and the second interconnects are through-silicon vias.

Hybrid interposer of glass and silicon to reduce thermal crosstalk

Embodiments disclosed herein comprise a die and methods of forming a die. In an embodiment, a die comprises, a die substrate, wherein the die substrate has a first thermal conductivity, and a first layer over the die substrate, wherein the first layer has a second thermal conductivity that is greater than the first thermal conductivity. In an embodiment, the die further comprises a second layer over the first layer, wherein the second layer comprises transistors.

Thermally enhanced silicon back end layers for improved thermal performance

Disclosed herein are vented lids for integrated circuit (IC) packages, as well as related methods and devices. For example, in some embodiments, an IC package may include a package substrate, a lid, and a die between the package substrate and the lid. A vent may extend between the interior surface and the exterior surface of the lid, and the vent may at least partially overlap the die.

Vented lids for integrated circuit packages

Embodiments disclosed herein include electronic packages and thermal solutions for such electronic packages. In an embodiment, an electronic package comprises, a package substrate with a first surface, a second surface opposite from the first surface, and a sidewall surface connecting the first surface to the second surface. In an embodiment, the electronic package further comprises a heat spreader, where a first portion of the heat spreader is attached to the first surface of the package substrate and a second portion of the heat spreader is attached to the second surface of the package substrate. In an embodiment, a third portion of the heat spreader adjacent to the sidewall surface of the package substrate connects the first portion of the heat spreader to the second portion of the heat spreader.

Package wrap-around heat spreader

Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises an interposer, a first die attached to the interposer, and a second die attached to the interposer. In an embodiment, the electronic package further comprises a heatsink thermally coupled to the first die and the second die. In an embodiment, the heatsink has a first surface facing away from the first die and the second die and a second surface facing the first die and the second die. In an embodiment, the heatsink comprises a thermal break between the first die and the second die.

Heatsink cutout and insulating through silicon vias to cut thermal cross-talk

Embodiments include a microelectronic device package structure having a first die on the substrate. One or more additional dice are on the first die, and a thermal electric cooler (TEC) is on the first die adjacent at least one of the one or more additional dice. A dummy die is on the TEC, wherein the dummy die is thermally coupled to the first die.

Package architecture including thermoelectric cooler structures

Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a plurality of first dies on a substrate, an interface layer over the first dies, a backside metallization (BSM) layer directly on the interface layer, where the BSM layer includes first, second, and third conductive layer, and a heat spreader over the BSM layer. The first conductive layer includes a titanium material. The second conductive layer includes a nickel-vanadium material. The third conductive layer includes a gold material, a silver material, or a copper material. The copper material may include copper bumps. The semiconductor package may include a plurality of second dies on a package substrate. The substrate may be on the package substrate. The second dies may have top surfaces substantially coplanar to top surface of the first dies. The BSM and interface layers may be respectively over the first and second dies.

Backside metallization (BSM) on stacked die packages and external silicon at wafer level, singulated die level, or stacked dies level

An integrated circuit (IC) package comprising an IC die, the IC die having a first surface and an opposing second surface. The IC die comprises a semiconductor material. The first surface comprises an active layer. A thermoelectric cooler (TEC) comprising a thermoelectric material is embedded within the IC die between the first surface and the second surface and adjacent to the active layer. The TEC has an annular shape that is substantially parallel to the first and second surfaces of the IC die. The thermoelectric material is confined between an outer sidewall along an outer perimeter of the TEC and an inner sidewall along an inner perimeter of the TEC. The outer and inner sidewalls are substantially orthogonal to the first and second surfaces of the IC die.

Annular silicon-embedded thermoelectric cooling devices for localized on-die thermal management

Embodiments include semiconductor packages and a method to form such packages. A semiconductor package includes first, second, and third microelectronic devices on a package substrate. The first microelectronic device has a top surface substantially coplanar to a top surface of the second microelectronic device. The third microelectronic device has a top surface above the top surfaces of the first and second microelectronic devices. The semiconductor package includes a first conductive layer on the first and second microelectronic devices, and a second conductive layer on the third microelectronic device. The second conductive layer has a thickness less than a thickness of the first conductive layer, and a top surface substantially coplanar to a top surface of the first conductive layer. The semiconductor includes thermal interface materials on the first and second conductive layers. The first and second conductive layers are comprised of copper, silver, boron nitride, or graphene.

3D buildup of thermally conductive layers to resolve die height differences

Growing community of inventors

Chandler, AZ, United States of America

Chandra Mohan Jha