Samsung Electronics Co., Ltd.

Fine Semitech Corp.

Chan-Uk Jeon

Hyung-ho Ko

Jae-Hyuck Choi

Jong-Keun Oh

Sung-jae Han

Ho-Young Kim

Jung-jin Kim

Won-Jung Kim

Keun-Hwan Park

Yun-song Jeong

Kyung-noh Kim

Dong-Wan Kim

Dong-gun Lee

Byung-Gook Kim

Seong-woon Choi

Hee-bom Kim

Dae-Hyuk Kang

Hee-Bom Kim

Sung-min Huh

Sang-hyun Kim

Myoung-Soo Lee

Sun-young Choi

Myoung-soo Lee

Han-Shin Lee

Jang-dong You

Chang-hwan Kim

Gi-sung Yoon

Bum-Hyun An

Hak-Seung Han

Young-keun Yoon

Sung-wan Kim

Byoung-Hun Park

Ik-jun Kim

A method of patterning a photoresist layer includes forming a photoresist layer on a substrate, exposing the photoresist layer to light using a first light source so as to induce a chemical change in the photoresist layer, performing a post-exposure bake process on the photoresist layer, the post-exposure bake process including irradiating the photoresist layer with at least two shots of laser light from a second light source such that the photoresist layer is heated to a first temperature, and performing a developing process on the photoresist layer after the post-exposure bake process, the development process selectively removing a portion of the photoresist layer.

Methods of manufacturing photomasks, methods of forming photoresist patterns and methods of manufacturing semiconductor devices

A megasonic cleaning method and a megasonic cleaning apparatus are provided. Microcavitation bubbles may be formed by applying an electromotive force to a cleaning solution using a megasonic energy in a separate room from an object to be cleaned. The microcavitation bubbles having a stable oscillation among the formed microcavitation bubbles may be moved to the object to be cleaned. A surface of the object to be cleaned may be cleaned using the microcavitation bubbles having the stable oscillation. Particles attached onto the surface of the object to be cleaned may be effectively removed while preventing pattern damage.

Method of megasonic cleaning of an object

Provided is a method and apparatus for cleaning a photomask. The photomask including a first region and a second region surrounding the first region, a pattern to be protected disposed on the first region, and a material to be removed exists on the second region. A cleaning liquid is sprayed from an inside region of the second region toward an outer region of the second region to remove the material, and a gas is blown from the first region toward the second region to protect the pattern.

Apparatus for cleaning photomask

In a method of manufacturing a photomask pattern, a light-shielding layer pattern and an anti-reflective layer pattern are formed sequentially on a transparent substrate. Oxidation and nitridation processes are performed on a sidewall of the light-shielding layer pattern to form a protection layer pattern on a lateral portion of the light-shielding layer pattern.

Photomasks and methods of manufacturing the same

A method of forming a photomask using a calibration pattern that may exactly transfer a desired pattern to a substrate. The method includes providing one-dimensional calibration design patterns each having first design measures and providing two-dimensional calibration design patterns each having second design measures; obtaining one-dimensional calibration measured patterns using the one-dimensional calibration design patterns and obtaining two-dimensional calibration measured patterns using the two-dimensional calibration design patterns; obtaining first measured measures of the one-dimensional calibration measured patterns and obtaining second measured measures of the two-dimensional calibration measured patterns; establishing a correlation between the first measured measures and the second measured measures; and converting a main measured measure of a main pattern into a corresponding one of the first measured measures using the correlation.

Method of forming photomask using calibration pattern, and photomask having calibration pattern

Method and apparatus for cleaning photomask

A pellicle frame, including aluminum, aluminum oxide, and a transition metal.

Pellicle frame, pellicle, lithography apparatus, and method of fabricating the pellicle frame

Disclosed is an electrostatic chuck with a temperature sensing unit, exposure equipment having the electrostatic chuck, and a method of detecting temperature on photomask surfaces. The temperature sensing unit and method of detecting temperature may include obtaining reflectance of a photomask using a multi-wavelength interferometer and determining a temperature on the photomask based on the reflectance.

Electrostatic chuck with temperature sensing unit, exposure equipment having the same, and method of detecting temperature from photomask

A method of forming a rim type of photomask prevents a chrome pattern formed in the 0&#xb0;-phase shift region of the mask substrate from being irregular and hence, ensures that the border of the 0&#xb0;-phase shift region has a uniform width. First, a light blocking layer is formed on a quartz substrate. A select portion of the light blocking layer is etched to form a patterned light blocking layer, and the underlying quartz substrate is etched to a predetermined depth to form a 180&#xb0;-phase shift region. Then, a fluid material layer is formed on the quartz substrate without an electron beam lithography process. The fluid material layer covers a central portion of the patterned light blocking layer and leaves an outer peripheral portion of the patterned light blocking layer exposed. Subsequently, the patterned light blocking layer is etched using the fluid material layer as a mask to form a light blocking pattern and to expose the substrate along a border adjacent the 180&#xb0;-phase shift region. Finally, the fluid material layer is removed.

Method of manufacturing rim type of photomask and photomask made by such method

A method of manufacturing an extreme ultra-violet lithography (EUVL) alternating phase-shift mask comprises preparing a substrate having a reflective layer, forming a light-shielding layer pattern on the reflective layer to cover part of the reflective layer while leaving a reflective region of the reflective layer exposed, forming a trench in a phase-shift region of the reflective layer by etching the reflective layer, and changing the physical structure of a non phase-shift region of the reflective region to lower its reflectivity with respect to extreme ultra-violet (EUV) light.

Method of manufacturing EUVL alternating phase-shift mask

Growing community of inventors

Seongnam-si, South Korea

Chan-Uk Jeon