Samsung Electronics Co., Ltd.

Chan Hyeong Lee

Byoung Hoon Lee

Sang Jin Hyun

Jae-Jung Kim

Min Woo Song

Hoon Joo Na

Sang Yong Kim

Hu Yong Lee

Sung In Suh

A semiconductor device includes an active pattern disposed on a substrate. A gate insulating film is disposed on the active pattern and extends along the active pattern. A work function adjustment pattern is disposed on the gate insulating film and extends along the gate insulating film. A gate electrode is disposed on the work function adjustment pattern. The work function adjustment pattern includes a first work function adjustment film, a second work function adjustment film that includes aluminum and wraps the first work function adjustment film, and a barrier film including titanium silicon nitride (TiSiN). A silicon concentration of the barrier film is in a range of about 30 at % or less.

Semiconductor device

A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate, a first active pattern disposed on the substrate and spaced apart from the substrate, a gate insulating film which surrounds the first active pattern, a first work function adjustment film which surrounds the gate insulating film and includes carbon, and a first barrier film which surrounds the first work function adjustment film, in which a carbon concentration of the first work function adjustment film increases as it goes away from the first barrier film.

Semiconductor device and method for fabricating the same

Growing community of inventors

Hwaseong-si, South Korea

Chan Hyeong Lee