Samsung Electronics Co., Ltd.

Chan-Hoon Park

Je-Woo Han

Hong-Seok Kim

Jong-Woo Sun

Jin-Young Park

Moon-Sang Lee

Seung-Hyun Kim

Jung-Mo Sung

Seung-Yoon Song

Bong-Jin Yum

Kwan-Woo Kim

Jong-Hwa Lee

Dong-Chan Kim

Hee-Sun Chae

Masayuki Tomoyasu

Hyun-Tae Kang

Bong-Su Cho

Ki-Hyun Chyun

In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode.

Plasma processing method, plasma processing apparatus and method of manufacturing semiconductor device using the apparatus

A method for fabricating a semiconductor device is disclosed. The method includes forming a first interlayer insulating layer including a first trench that is defined by a first gate spacer and a second trench that is defined by a second gate spacer on a substrate, forming a first gate electrode that fills a part of the first trench and a second gate electrode that fills a part of the second trench, forming a first capping pattern that fills the remainder of the first trench on the first gate electrode, forming a second capping pattern that fills the remainder of the second trench on the second gate electrode, forming a second interlayer insulating layer that covers the first gate spacer and the second gate spacer on the first interlayer insulating layer, forming a third interlayer insulating layer on the second interlayer insulating layer and forming a contact hole that penetrates the third interlayer insulating layer and the second interlayer insulating layer between the first gate electrode and the second gate electrode.

Method for fabricating a semiconductor device

A measurement system and a measurement method, which can obtain a measurement value close to a true value considering an overlay measurement error according to a higher order regression analysis model. The measurement system and the measurement method provide a technique for determining optimal positions of shots to be measured using an optimal experimental design. When the regression analysis model and the number of shots to be measured are determined in advance, a method is used for determining an optimal number of shots to be measured according to the regression analysis model and process dispersion using a confidence interval estimating method. A dynamic sampling method is used for dynamically changing the number and positions of shots to be measured according to a change in process features by combining the above two methods. And, when erroneous data is detected, or when measured data is missing, a robust regression analysis method and a technique for filtering the erroneous data and the missing data are used.

Measurement system for correcting overlay measurement error

A measurement system and a measurement method, which can obtain a measurement value close to a true value considering an overlay measurement error according to a higher order regression analysis model, is disclosed. The measurement system and the measurement method provide a technique for determining optimal positions of shots to be measured using an optimal experimental design. When the regression analysis model and the number of shots to be measured are determined in advance, a method is used for determining an optimal number of shots to be measured according to the regression analysis model and process dispersion using a confidence interval estimating method.

A chemical solution dispensing device adapted for use with photo spinner equipment is disclosed. The device includes a nozzle adapted to spray chemical solution onto a wafer, a pressure sensor associated with the nozzle and adapted to sense a spraying pressure and generate a pressure value corresponding to the sensed spraying pressure, and a controller adapted to receive the pressure value, compare the received pressure value to a predetermined threshold pressure value, and generate an interlock signal when the received pressure value exceeds the predetermined threshold pressure value.

Device for controlling dispensing error in photo spinner equipment

A system is provided for adjusting a photo-exposure time of a manufacturing apparatus for semiconductor devices. The system for adjusting the photo-exposure time includes a photo-exposure unit whose photo-exposure time is adjustable according to one or more adjustment signals, a pre-exposure step influence prediction unit that obtains pre-exposure step processing information and extracts parameters that may influence a resulting pattern during photo-exposure, and provides this information as feed forward data, an inspection unit that checks processed steps during a certain period after photo-exposure and provides an inspection value as a feed back data, and a central processing unit that receives the feed forward and feedback data and, by means of a predetermined calculation method, generates the one or more adjustment signals, which are used to adjust the photo-exposure time.

Method and apparatus for adjusting a photo-exposure time

A semiconductor wafer overlay correction method for an exposure process in a semiconductor fabricating stepper incorporates variations in equipment characteristics with time. The wafer overlay correction method includes measuring an overlay error correction value of a semiconductor wafer that is exposed by the stepper, calculating an overlay error correction value by summing the measured overlay error correction value, a variation in the stepper characteristics that is obtained through an empirical characterization of input changes, and a weighting value obtained from a predetermined plurality of wafer lots, and providing the calculated overlay error correction value to the semiconductor fabricating stepper to control an exposure process of a subsequent wafer lot.

Method for automatically correcting overlay alignment of a semiconductor wafer

System for adjusting a photo-exposure time

A lithography system includes a spinner, a first controller, a stepper and a second controller. The spinner coats a photoresist film on a semiconductor substrate. The first controller sets a first optimal process parameter according to external information regarding the semiconductor wafer and controls the spinner according to the first optimal process parameter, when the semiconductor wafer is loaded into the spinner. The stepper exposes the semiconductor wafer, which is coated with the photoresist film, to light of a predetermined wavelength. The second controller sets a second optimal process parameter according to the external information regarding the semiconductor wafer and controls the stepper according to the second optimal process parameter, when the semiconductor wafer coated with the photoresist film is loaded into the stepper.

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Seoul, South Korea

Chan-Hoon Park