Speedfam-ipec Corporation

Speedfam Corporation

Chad Goudie

John Natalicio

Paul L Holzapfel

Andrew M Yednak, Iii

Eric C Shurtliff

Greg Olsen

The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a workpiece, e.g., a semiconductor wafer. A probe is disposed proximate the outer perimeter of a polishing pad on a CMP table such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. A reflected signal received by the probe is analyzed to calculate the thickness of the surface layer. Alternatively, the reflective characteristics of the semiconductor layers may affect the nature of the reflected signal; changes in the reflected signal can be detected to indicate when a metallic layer has been removed from an oxide layer. In accordance with another aspect of the present invention, a nozzle assembly having a plurality of fluid outlets may be provided to apply a stream of deionized water at the surface under inspection to thereby remove excess slurry and debris from the local region of the workpiece being inspected. A second fluid nozzle may be provided to apply a stream of deionized water to the tip of the probe tip to thereby clean the probe tip between endpoint detection cycles. The nozzle assembly may also include a third fluid nozzle for applying a stream of nitrogen gas to thereby deflect debris away from the probe tip during the endpoint detection procedure and a fourth fluid nozzle for applying a stream of nitrogen gas to thereby remove water and debris from the probe tip during the endpoint detection procedure.

Apparatus for cleaning workpiece surfaces and monitoring probes during workpiece processing

Method for cleaning workpiece surfaces and monitoring probes during

The present invention relates to a wafer cleaning machine having an input station, a water track, a cleaning station, a rinsing station, a spin-dry station, and a load station. The input station includes two or more wafer supply areas for a continuous supply of wafers to the water track. After the wafers enter the water track from the input station, the wafers are transported down the track into the wafer cleaning station. The wafer cleaning station comprises a plurality of pairs of rollers which pull the wafers through the cleaning station and thereby clean the top and bottom flat surfaces of the wafers. A one-piece cleaning fluid manifold formed within the upper panel of the cleaning station facilitates effective distribution of the cleaning fluid to the rollers. From the cleaning station, the wafers are transported to a rinse station. From the rinsing station, the workpieces are transferred to a dual spin-dry station. A manipulator assembly is configured to cooperate with the rinse station to lift and transport the rinsed wafers from the rinse station to the two spin-dry assemblies. At the spin-dry station, the workpieces are spun at a high speed to remove any residual water droplets or the like. The spin-dry assemblies include a water/debris shield that rises during the spin-dry process. From the dual spin-dry station, a robotic transfer arm removes the work pieces from the spin-dry station and places them in one of a pair of unload cassettes. After the cassettes are filled with wafers, they are removed and transferred for subsequent processing.

Apparatus for rinsing wafers in the context of a combined cleaning

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Chandler, AZ, United States of America

Chad Goudie