Versum Materials US, LLC

Chad Chang-Tse Hsieh

Mark Leonard O'Neill

Xiaobo Shi

Laura M Matz

Ming-Shih Tsai

Agnes Derecskei-Kovacs

Agnes Derecskei

Blake J Lew

Chris Keh-Yeuan Li

Rung-Je Yang

Pao-Chia Pan

Mark Leonard O'neill

Pao Chia Pan

Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise solvent, abrasive, at least three chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefor; wherein at least one chelator is an amino acid or an amino acid derivative. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide are used in the formulations.

Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications

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Tempe, AZ, United States of America

Chad Chang-Tse Hsieh